Protein-Templated Assembly of CdS Nanowires on a Silicon Oxide Substrate

This study investigates heat dissipation at carbon nanotube (CNT) junctions supported on silicon dioxide substrate using molecular dynamics simulations. The temperature rise in a CNT (∼top CNT) not making direct contact with the oxide substrate but only supported by other CNTs (∼bottom CNT) is observed to be hundreds of degree higher compared with the CNTs well-contacted with the substrate at similar power densities. The analysis of spectral temperature decay of CNT-oxide system shows very fast intratube energy transfer in a CNT from high-frequency band to intermediate-frequency bands. The low frequency phonon band (0–5 THz) of top CNT shows two-stage energy relaxation which results from the efficient coupling of low frequency phonons in the CNT-oxide system and the blocking of direct transport of high- and intermediate-frequency phonons of top CNT to the oxide substrate by bottom CNT.

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Development of palladium-based hydrogen thin film sensor using silicon oxide substrate

Indian Journal of Physics ◽

10.1007/s12648-012-0241-9 ◽

2013 ◽

Vol 87 (6) ◽

pp. 511-515 ◽

Cited By ~ 5

Author(s):

M. M. Jamshidi ◽

K. Alshaltami ◽

F. Akkari ◽

J. Wright

Keyword(s):

Thin Film ◽

Silicon Oxide ◽

Film Sensor ◽

Thin Film Sensor ◽

Oxide Substrate

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DNA-Templated Assembly of Conducting Gold Nanowires between Gold Electrodes on a Silicon Oxide Substrate

Chemistry of Materials ◽

10.1021/cm047970w ◽

2005 ◽

Vol 17 (8) ◽

pp. 1959-1964 ◽

Cited By ~ 76

Author(s):

Andrea Ongaro ◽

Fionn Griffin ◽

Paul Beecher ◽

Lorraine Nagle ◽

Daniela Iacopino ◽

...

Keyword(s):

Silicon Oxide ◽

Gold Electrodes ◽

Gold Nanowires ◽

Oxide Substrate

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Electric and Magnetic Properties of Sputter Deposited BiFeO3Films

Advances in Materials Science and Engineering ◽

10.1155/2013/857465 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 3

Author(s):

N. Siadou ◽

I. Panagiotopoulos ◽

N. Kourkoumelis ◽

T. Bakas ◽

K. Brintakis ◽

...

Keyword(s):

Silicon Oxide ◽

Weak Ferromagnetism ◽

Film Structure ◽

Ex Situ ◽

Leakage Currents ◽

Process Gas ◽

Heat Treated ◽

Oxide Phases ◽

Oxide Substrate ◽

Sputter Deposited

Polycrystalline BiFeO3films have been magnetron sputter deposited at room temperature and subsequently heat-treated ex situ at temperatures between 400 and 700°C. The deposition was done in pure Ar atmosphere, as the use of oxygen-argon mixture was found to lead to nonstoichiometric films due to resputtering effects. At a target-to-substrate distanced=2′′the BiFeO3structure can be obtained in larger range process gas pressures (2–7 mTorr) but the films do not show a specific texture. Atd=6′′codeposition from BiFeO3and Bi2O3has been used. Films sputtered at low rate tend to grow with the (001) texture of the pseudo-cubic BiFeO3structure. As the film structure does not depend on epitaxy similar results are obtained on different substrates. A result of the volatility of Bi, Bi rich oxide phases occur after heat treatment at high temperatures. A Bi2SiO5impurity phase forms on the substrate side, and does not affect the properties of the main phase. Despite the deposition on amorphous silicon oxide substrate weak ferromagnetism phenomena and displaced loops have been observed at low temperatures showing that their origin is not strain. Ba, La, Ca, and Sr doping suppress the formation of impurity phases and leakage currents.

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Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate

physica status solidi (b) ◽

10.1002/pssb.200982968 ◽

2009 ◽

Vol 247 (4) ◽

pp. 907-911 ◽

Cited By ~ 1

Author(s):

Sushant Sonde ◽

Filippo Giannazzo ◽

Vito Raineri ◽

Emanuele Rimini

Keyword(s):

Silicon Oxide ◽

Oxide Substrate

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Effect of the On/Off Cyclic Modulation Time Ratio of C2H2/H2 Flow on the Low Temperature Deposition of Carbon Nanofilaments

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.091 ◽

2007 ◽

Vol 7 (11) ◽

pp. 3969-3973 ◽

Cited By ~ 9

Author(s):

Kwang-Duk Kim ◽

Sung-Hoon Kim ◽

Nam Seok Kim ◽

Dong-Uk Kim

Keyword(s):

Low Temperature ◽

Gas Flow ◽

Silicon Oxide ◽

Chemical Vapor ◽

Hydrogen Gas ◽

Etching Time ◽

Catalyst Precursor ◽

Time Ratio ◽

Oxide Substrate ◽

Initial Deposition

Low temperature (less than 600 °C) deposition of carbon nanofilaments (CNFs) could be achieved on the silicon oxide substrate by thermal chemical vapor deposition system. We used Fe(CO)5 as the catalyst precursor for CNFs formation. For the enhancement of CNFs formation density, the source gas flow was intentionally manipulated as the cyclic on/off modulation of C2H2/H2 flow during the initial deposition stage. The CNFs formation density on silicon oxide substrate could be much enhanced by the cyclic modulation process having the higher growing/etching time ratio (180/30 s). Furthermore, the lattice structures of CNFs developed into carbon nanotubes at the higher growing/etching time ratio (180/30 s) case. The solely hydrogen gas feeding (C2H2 flow off) time during the initial deposition stage seems to play an important role for the variation in the CNFs formation characteristics by the cyclic modulation process.

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Growth and Etch Forms of Germanium Microcrystals on a Silicon Oxide Substrate

ECS Meeting Abstracts ◽

10.1149/ma2016-02/30/2033 ◽

2016 ◽

Keyword(s):

Silicon Oxide ◽

Oxide Substrate

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Di- and tri-aminosilane SAM-assisted patterning of highly pure poly(3,4-ethylenedioxythiophene) nanofilms robustly adhered to silicon oxide substrate

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2007.04.060 ◽

2007 ◽

Vol 201 (22-23) ◽

pp. 9426-9431 ◽

Cited By ~ 8

Author(s):

Ilsun Pang ◽

Sungsoo Kim ◽

Jaegab Lee

Keyword(s):

Silicon Oxide ◽

Oxide Substrate ◽

Pure Poly

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An Easy Route to Wettability Changes of Polyethylene Terephthalate–Silicon Oxide Substrate Films for High Barrier Applications, Surface-Modified with a Self-Assembled Monolayer of Fluoroalkylsilanes

Polymers ◽

10.3390/polym11020257 ◽

2019 ◽

Vol 11 (2) ◽

pp. 257 ◽

Cited By ~ 2

Author(s):

Paola Scarfato ◽

Nicola Schiavone ◽

Gabriella Rossi ◽

Loredana Incarnato

Keyword(s):

Contact Angle ◽

Polyethylene Terephthalate ◽

Silicon Oxide ◽

Film Surface ◽

Water Vapor Permeability ◽

Vapor Permeability ◽

Self Assembled Monolayer ◽

Water Contact ◽

Oxide Substrate ◽

Self Assembled

Inorganic–organic multilayer films consisting of polymers coated with thin inorganic oxidic layers (e.g., SiOx) ensure very high barrier performances against gas and vapor permeation, what makes them packaging materials suitable for sophisticated technical applications, including the encapsulation of photovoltaic devices or quantum dots, barrier films for optical displays, and transparent greenhouse screens. In these fields, surface coating or texturing of the multilayer protective films are effective technologies to improve their self-clean ability, thus reducing the required maintenance and ensuring longer durability and better performances. In this work, we used the self-assembled monolayer (SAM) technique to modify the surface and wetting properties of commercial polyethylene terephthalate-silicon oxide substrate (PET-SiOx) films developed for technical applications requiring a combined high barrier and transparency. The selected surface modifier was the 1H,1H,2H,2H-per-fluorodecyltrichlorosilane (FDTS). The reagent mixture composition was optimized for the lowest water and oil wettability, as well as the highest self-cleaning capacity and performance stability. In particular, for the used PET-SiOx film the best FDTS/film surface for both the lowest water and oil wettability was found to be equal to 26.5 mM/dm2, which changes the surface behavior from very hydrophilic (static water contact angle (CAw) = 21.5°) to hydrophobic (CAw = 101°), and gives a significant increment of the static oil contact angle (CAo) from 27° to 60°. Interestingly, the results demonstrated that the SAM reaction occurred also on the uncoated the PET side. After the SAM treatment, a small increase of the water vapor permeability is observed, probably due to a crack or defect onset of the SiOx coating of the SAM modified films. On this point, atomic force measurements demonstrated an increment of the SiOx coating layer roughness after the SAM treatment execution. Finally, the transparency changes of the SAM treated films, measured in the wavelength range 400–800 nm, were always small, so that the results were acceptable for the films’ use in applications where high transparency is required.

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