Layer thickness analysis of silicon solar cells

2010 ◽  
Author(s):  
M.H. Abdullah ◽  
N.A. Rashied ◽  
M. Rusop
Keyword(s):  
Solar Cells ◽  
Layer Thickness ◽  
Silicon Solar Cells

scholarly journals SIMULATION HETEROJUNCTION SOLAR CELL A-SI:H(N)/A-SI:H(I)/C-SI(P)

2020 ◽  
Vol 2 (6(75)) ◽  
pp. 56-61
Author(s):  
S.A. Livinskaya S.A.
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thin Layer ◽  
Layer Thickness ◽  
Silicon Solar Cell ◽  
Heterojunction Solar Cell ◽  
Silicon Solar Cells ◽  
Technological Research ◽  
A Value ◽  
Photovoltaic Characteristics

In this work, a silicon solar cell HIT (heterojunction with intrinsic thin-layer) a-Si:H(n)/a-Si:H(i)/c-Si(p) was simulated using AFORS-HET software. The influence of layer thickness and temperature of the solar cell under study on its photovoltaic characteristics is discussed. When optimizing the above characteristics, its effectiveness reaches a value of 19.1%. The results obtained are the foundation for further scientific and technological research on the development of highly efficient silicon solar cells.

Optimization of the Dielectric Layer Thickness for Surface-Plasmon-Induced Light Absorption for Silicon Solar Cells

2012 ◽  
Vol 51 ◽  
pp. 042301 ◽  
Author(s):  
Rui Xu ◽  
Xiaodong Wang ◽  
Wen Liu ◽  
Liang Song ◽  
Xiaona Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Layer Thickness ◽  
Surface Plasmon ◽  
Light Absorption ◽  
Dielectric Layer ◽  
Silicon Solar Cells

scholarly journals Simulation of double-junction III-phosphides/silicon solar cells

2021 ◽  
Vol 2086 (1) ◽  
pp. 012094
Author(s):  
A A Rakitina ◽  
A S Gudovskikh
Keyword(s):  
Solar Cells ◽  
Solar Energy ◽  
Layer Thickness ◽  
Active Material ◽  
Charge Carriers ◽  
Silicon Solar Cells ◽  
Group Iii ◽  
Current Matching ◽  
Double Junction ◽  
Electronic Affinity

Abstract The characteristics of two-junction solar cells were calculated in this work, in which phosphides of group III are used as the top junction, and Si as the bottom junction. The following ternary phosphide compounds Ga0.52In0.48P (1.85 eV), GaPN0.02 (1.9 eV), and GaPN0.04 (1.7 eV) were considered as the active material of the top junction. The use of GaPN0.04 allowed one to reach the current matching with the bottom Si junction and an efficiency of 30% was achieved. In addition, the influence of the layer thickness, the lifetime of minority charge carriers and the electronic affinity on the efficiency of solar energy conversion were considered.

Semi-Transparent Amorphous Silicon Solar Cells on Inexpensive Plastic Substrates

2006 ◽  
Vol 973 ◽  
Author(s):  
Ilvydas Matulionis ◽  
Jian Hu ◽  
Alex Stavrides ◽  
Nathan Call ◽  
Augusto Kunrath ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Active Area ◽  
Silicon Solar Cells ◽  
Plastic Substrates ◽  
Area Efficiency

ABSTRACTWe report a monolithic series connected semi-transparent (transmission > 40%) amorphous silicon (a-Si:H) solar cell panel (substrate area 30cm × 40cm), which has an i-layer thickness <2000Å and an active area efficiency, η ∼ 3%. We also report on all laser scribed, series connected mini-modules with an aperture area η > 3% constructed on inexpensive plastic substrates.

Optimization of the Dielectric Layer Thickness for Surface-Plasmon-Induced Light Absorption for Silicon Solar Cells

2012 ◽  
Vol 51 (4R) ◽  
pp. 042301 ◽  
Author(s):  
Rui Xu ◽  
Xiaodong Wang ◽  
Wen Liu ◽  
Liang Song ◽  
Xiaona Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Layer Thickness ◽  
Surface Plasmon ◽  
Light Absorption ◽  
Dielectric Layer ◽  
Silicon Solar Cells
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