Electroluminescence and photoluminescence properties of porous silicon nanostructures with optimum etching time of photo-electrochemical anodization

Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be a device for future flat screen display and can be high in demand. Main purpose of this experiment is to determine the photoluminescence properties of porous silicon nanostructures (PSiNs). PSiNs samples were prepared using photo-electrochemical anodization. P-type silicon substrate was used for this experiment. For the formation of PSiNs, a fixed current density (J=20 mA/cm2) and 30 minutes etching time was applied for the variety of electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH, were used for samples 3:1, 2:1, 1:1, 1:2 and 3:1. The effective photoluminescence properties was observed for sample C.

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Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.180 ◽

2013 ◽

Vol 667 ◽

pp. 180-185

Author(s):

M. Ain Zubaidah ◽

F.S. Husairi ◽

S.F.M. Yusop ◽

Noor Asli Asnida ◽

Mohamad Rusop ◽

...

Keyword(s):

Porous Silicon ◽

Volume Ratio ◽

Boron Doping ◽

Peak Position ◽

Silicon Nanostructures ◽

Etching Time ◽

Photoluminescence Properties ◽

Current Densities ◽

Pl Spectrum ◽

P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

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Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.576.511 ◽

2012 ◽

Vol 576 ◽

pp. 511-515

Author(s):

N.A. Asli ◽

Maslihan Ain Zubaidah ◽

S.F.M. Yusop ◽

Khairunnadim Ahmad Sekak ◽

Mohammad Rusop ◽

...

Keyword(s):

Porous Silicon ◽

Crystalline Silicon ◽

Surface Characteristic ◽

Electrochemical Anodization ◽

Silicon Nanostructures ◽

Etching Time ◽

Force Microscopy ◽

Etching Parameters ◽

P Type ◽

Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

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Variation of etching time on formation of porous silicon on p-type Si (111) using electrochemical anodization method

Journal of Physics Conference Series ◽

10.1088/1742-6596/1825/1/012067 ◽

2021 ◽

Vol 1825 (1) ◽

pp. 012067

Author(s):

Sehati ◽

S Wijayanti ◽

R Suryana

Keyword(s):

Porous Silicon ◽

Electrochemical Anodization ◽

Etching Time ◽

P Type ◽

Anodization Method

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Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.686.49 ◽

2013 ◽

Vol 686 ◽

pp. 49-55

Author(s):

M. Ain Zubaidah ◽

N.A. Asli ◽

Mohamad Rusop ◽

Saifollah Abdullah

Keyword(s):

Porous Silicon ◽

Light Emission ◽

Light Emitting Diode ◽

Volume Ratio ◽

Visible Range ◽

Silicon Nanostructures ◽

Etching Time ◽

Light Emitting ◽

Flat Screen ◽

P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

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Anodisation Time-Related Nanocrystallite Size of Porous Silicon Template Studied by Raman Spectroscopy, Photoluminescence and Fourier Transforms Infrared Spectroscopy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.686.56 ◽

2013 ◽

Vol 686 ◽

pp. 56-64

Author(s):

N.A. Asli ◽

Mohamad Rusop ◽

Saifollah Abdullah

Keyword(s):

Raman Spectroscopy ◽

Infrared Spectroscopy ◽

Porous Silicon ◽

Fourier Transforms ◽

Crystalline Silicon ◽

Electrochemical Anodization ◽

Etching Time ◽

Nanocrystallite Size ◽

Peak Broadening ◽

Fourier Transforms Infrared Spectroscopy

Nanostructured Porous Silicon templates (NPSiT) were prepared by photo-electrochemical anodization of p-type crystalline silicon in HF electrolyte at different etching time. Five samples were prepared with etching time varied from 10 to 50 minutes at 20 mA/cm2 of current density. The effects of etching time on NPSiT were observed based on nanocrystallite size, photon energy and surface distribution. These studied was demonstrated by Raman spectroscopy, photoluminescence (PL) and Fourier transforms infrared spectroscopy (FTIR). It was found that NPSiT sample with large pore diameter, which is smaller nanocrystallites size of Si between pore. The optical properties of NPSiT were investigated by photoluminescence (PL) and PL peak broadening and shifting towards higher energy can be observed with increasing etching time. The optimum etching time with respect to PL intensity was obtained at 30 minutes, for which uniform pores and a shift of the PL maximum to a higher energy of 1.9 eV is observed.

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EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUS Si DEVICES

Modern Physics Letters B ◽

10.1142/s0217984913502175 ◽

2013 ◽

Vol 27 (30) ◽

pp. 1350217 ◽

Cited By ~ 5

Author(s):

RAID A. ISMAIL

Keyword(s):

Porous Silicon ◽

Photoelectron Spectroscopy ◽

Crystalline Silicon ◽

Electrochemical Anodization ◽

Etching Time ◽

X Ray ◽

Force Microscopy ◽

Low Resistivity ◽

Time Scanning ◽

P Type

In this paper, we report the effect of etching time on the morphological, structural and electrical properties of porous silicon ( PSi ) synthesized by electrochemical anodization of low resistivity p-type crystalline silicon at current density of 15 mA/cm2. Atomic force microscopy (AFM) measurements showed that the square root of roughness is increased with etching time. Scanning electron microscopy (SEM) investigations revealed that the microstructure of porous silicon is varying with etching time and pores from nano-size to micro-size were formed. Energy dispersive X-ray (EDX) analysis confirmed that the amount of oxygen increases with etching time. Porosity and thickness estimated gravimetrically showed a dependence on the anodization time. The room temperature dark electrical resistivity of porous silicon has observed to be increased with etching time. X-ray photoelectron spectroscopy (XPS) analysis of synthesized porous silicon has shown peaks of C 1s, Si 2p, O 1s, F 1s and N 1s. Current–voltage (I–V) characteristics of synthesized Al / PSi /c -Si junctions prepared at different etching times are investigated and analyzed. The ideality factor, barrier height and built-in potential of porous silicon junctions were strongly found to be dependent on the etching time.

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Relation of Anodisation Parameter for Nanocrystallite Size of Porous Silicon Template Studied by Micro-Raman Spectroscopy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.324 ◽

2013 ◽

Vol 667 ◽

pp. 324-328 ◽

Cited By ~ 1

Author(s):

N.A. Asli ◽

Mohamad Rusop ◽

Saifollah Abdullah

Keyword(s):

Raman Spectroscopy ◽

Porous Silicon ◽

Current Density ◽

Pore Diameter ◽

Crystalline Silicon ◽

Electrochemical Anodization ◽

Etching Time ◽

Micro Raman Spectroscopy ◽

Nanocrystallite Size ◽

P Type

Nanostructured porous silicon templates (NPSiT) were prepared by photo-electrochemical anodization of p-type crystalline silicon in HF electrolyte at different etching time. Two set anodisation parameter were observed, anodisation time nd current density applied. For set one, five samples were prepared with etching time varied from 10 to 50 minutes at 20 mA/cm2 of current density. For set two, five samples were prepared with current density varied from 5 to 40 mA/cm2 for 30 minutes. The effects of these anodisation parameter on NPSiT were observed based on nanocrystallite size. These studied was demonstrated by Raman spectroscopy. It was found that NPSiT sample with large pore diameter, which is smaller nanocrystallites size of Si between pore.

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