System-level design and performance modeling for multilevel interconnect networks for carbon nanotube field-effect transistors

2012 ◽  
Author(s):  
Ahmet Ceyhan ◽  
Azad Naeemi
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Performance Modeling ◽  
Field Effect Transistors ◽  
System Level ◽  
System Level Design ◽  
Interconnect Networks ◽  
Level Design ◽  
And Performance

Power and performance aware electronic system level design

2017 ◽  
Author(s):  
Amal Ben Ameur ◽  
Didier Martinot ◽  
Patricia Guitton-Ouhamou ◽  
Valerio Frascolla ◽  
Francois Verdier ◽  
...  
Keyword(s):  
Electronic System ◽  
System Level ◽  
System Level Design ◽  
Electronic System Level ◽  
Level Design ◽  
And Performance

scholarly journals Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance

VLSI Design ◽  
2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Yao Xu ◽  
Ashok Srivastava ◽  
Ashwani K. Sharma
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Dynamic Models ◽  
Field Effect Transistors ◽  
Vlsi Circuits ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Nanometer Cmos ◽  
And Performance ◽  
Cmos Vlsi

Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects used in nanometer CMOS VLSI circuits.

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