AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

1999 ◽  
Vol 28 (8) ◽  
pp. 980-985 ◽  
Author(s):  
P. Savolainen ◽  
M. Toivonen ◽  
S. Orsila ◽  
M. Saarinen ◽  
P. Melanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2001 ◽  
Vol 29 (2) ◽  
pp. 75-77 ◽  
Author(s):  
T. Piwo?ski ◽  
P. Sajewicz ◽  
J. M. Kubica ◽  
M. Zbroszczyk ◽  
K. Regi?ski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength

All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

1995 ◽  
Vol 67 (16) ◽  
pp. 2332-2334 ◽  
Author(s):  
Mika Toivonen ◽  
Marko Jalonen ◽  
Arto Salokatve ◽  
Jari Näppi ◽  
Pekka Savolainen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer

Strained-layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications

1990 ◽  
Author(s):  
William J. Schaff ◽  
Stephen D. Offsey ◽  
Paul J. Tasker ◽  
Lester F. Eastman ◽  
S. McKernan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Speed ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer

Interfacial Quality of Strained-Layer InGaAs/GaAs Quantum Well Lasers Grown by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
M. Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Strong Dependence ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Gas Source ◽  
Recombination Centers

ABSTRACTWe report a study of interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. It was found that the growth temperature (Tgr) of the InGaAs layer plays an important role in the interfacial quality. For Tgr < 515 °C, a large amount of non-radiative recombination centers is likely to exist in the InGaAs/GaAs quantum well, which can be attributed to the presence of vacancies and atom clusters and lattice misfit defects. For Tgr > 515 °C, the InGaAs/GaAs interfaces show significant roughness due to In segregation. Rapid thermal annealing grades the InGaAs/GaAs interface because of interdiffusion of group-III atoms at the interface, and removes most of the non-radiative recombination centers from the low Tgr (<515 °C) samples. In addition, we observed that the interfacial quality of the InGaAs/GaAs quantum well shows no strong dependence on (100) vicinal orientations of GaAs substrate.

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