Low-Threshold $\bf 1.3\,\mbi{\mu}m$ Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 5B) ◽  
pp. L634-L636 ◽  
Author(s):  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Harry Asonen ◽  
Richard Murison
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Low Threshold ◽  
Multi Quantum Well

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

1999 ◽  
Vol 28 (8) ◽  
pp. 980-985 ◽  
Author(s):  
P. Savolainen ◽  
M. Toivonen ◽  
S. Orsila ◽  
M. Saarinen ◽  
P. Melanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2001 ◽  
Vol 29 (2) ◽  
pp. 75-77 ◽  
Author(s):  
T. Piwo?ski ◽  
P. Sajewicz ◽  
J. M. Kubica ◽  
M. Zbroszczyk ◽  
K. Regi?ski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength

All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

1995 ◽  
Vol 67 (16) ◽  
pp. 2332-2334 ◽  
Author(s):  
Mika Toivonen ◽  
Marko Jalonen ◽  
Arto Salokatve ◽  
Jari Näppi ◽  
Pekka Savolainen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer
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