Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2001 ◽  
Vol 29 (2) ◽  
pp. 75-77 ◽  
Author(s):  
T. Piwo?ski ◽  
P. Sajewicz ◽  
J. M. Kubica ◽  
M. Zbroszczyk ◽  
K. Regi?ski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

1999 ◽  
Vol 28 (8) ◽  
pp. 980-985 ◽  
Author(s):  
P. Savolainen ◽  
M. Toivonen ◽  
S. Orsila ◽  
M. Saarinen ◽  
P. Melanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer

All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

1995 ◽  
Vol 67 (16) ◽  
pp. 2332-2334 ◽  
Author(s):  
Mika Toivonen ◽  
Marko Jalonen ◽  
Arto Salokatve ◽  
Jari Näppi ◽  
Pekka Savolainen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer

Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 747-750 ◽  
Author(s):  
Y.Q. Wei ◽  
S.M. Wang ◽  
X.D. Wang ◽  
Q.X. Zhao ◽  
M. Sadeghi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Long Wavelength
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