Suitable channel structure design for high electron mobility InAlAs/InGaAs MODFET

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines ◽

10.3390/mi10100690 ◽

2019 ◽

Vol 10 (10) ◽

pp. 690 ◽

Cited By ~ 3

Author(s):

Idriss Abid ◽

Riad Kabouche ◽

Catherine Bougerol ◽

Julien Pernot ◽

Cedric Masante ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Channel Structure ◽

Breakdown Field ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Thin Channel ◽

Channel Configuration

In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 °C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications.

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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications

IEEE Electron Device Letters ◽

10.1109/led.2010.2048995 ◽

2010 ◽

Vol 31 (7) ◽

pp. 677-679 ◽

Cited By ~ 3

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Yu-Lin Chen ◽

Chien-Ying Wu ◽

Edward Yi Chang ◽

...

Keyword(s):

Performance Improvement ◽

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Channel Structure ◽

High Electron ◽

High Electron Mobility ◽

Rf Performance

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AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s109257830000449x ◽

2000 ◽

Vol 5 (S1) ◽

pp. 349-354

Author(s):

E.L. Piner ◽

D.M. Keogh ◽

J.S. Flynn ◽

J.M Redwing

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron Mobility Transistor ◽

Structure Design ◽

High Electron ◽

High Electron Mobility ◽

Gas Channel ◽

Si Doping ◽

Gan Hemt ◽

Hemt Structure

We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

MRS Proceedings ◽

10.1557/proc-595-f99w4.4 ◽

1999 ◽

Vol 595 ◽

Author(s):

E.L. Piner ◽

D.M. Keogh ◽

J.S. Flynn ◽

J.M Redwing

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron Mobility Transistor ◽

Structure Design ◽

High Electron ◽

High Electron Mobility ◽

Gas Channel ◽

Si Doping ◽

Gan Hemt ◽

Hemt Structure

AbstractWe report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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