RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.

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A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement

2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies ◽

10.1109/icsccn.2011.6024557 ◽

2011 ◽

Cited By ~ 4

Author(s):

Saba Rajabi ◽

Ali A. Orouji ◽

Hamid Amini Moghadam ◽

S. E. Jamali Mahabadi ◽

Morteza Fathipour

Keyword(s):

Performance Improvement ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

Письма в журнал технической физики ◽

10.21883/pjtf.2019.21.48470.17961 ◽

2019 ◽

Vol 45 (21) ◽

pp. 29

Author(s):

Н.А Малеев ◽

А.П. Васильев ◽

А.Г. Кузьменков ◽

М.А. Бобров ◽

М.М. Кулагина ◽

...

Keyword(s):

Current Density ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistor ◽

Device Fabrication ◽

Fabrication Process ◽

Channel Structure ◽

Gate Length ◽

High Electron ◽

High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

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