Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs SRL grown with an As/sub 2/ source using molecular beam epitaxy
Keyword(s):
2005 ◽
Vol 44
(No. 14)
◽
pp. L432-L434
◽
Keyword(s):
2001 ◽
Vol 40
(Part 1, No. 3B)
◽
pp. 1885-1887
◽
2012 ◽
Vol 132
(2)
◽
pp. 289-292
◽
Keyword(s):
2002 ◽
Vol 13
(2-4)
◽
pp. 1151-1154
◽
Keyword(s):
Keyword(s):
2003 ◽
Vol 251
(1-4)
◽
pp. 145-149
◽
2005 ◽
Vol 276
(1-2)
◽
pp. 72-76
◽
Keyword(s):