Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1885-1887 ◽  
Author(s):  
Toshiyuki Kaizu ◽  
Koichi Yamaguchi
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots

Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy

2016 ◽  
Vol 451 ◽  
pp. 79-82
Author(s):  
Nicholas Weir ◽  
Ruizhe Yao ◽  
Chi-Sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

2003 ◽  
Vol 251 (1-4) ◽  
pp. 145-149 ◽  
Author(s):  
Fariba Ferdos ◽  
Shumin Wang ◽  
Yongqiang Wei ◽  
Mahdad Sadeghi ◽  
Qingxiang Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots

Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

2017 ◽  
Vol 477 ◽  
pp. 19-24 ◽  
Author(s):  
Yuanchang Zhang ◽  
Kurt G. Eyink ◽  
Lawrence Grazulis ◽  
Madelyn Hill ◽  
Joseph Peoples ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

Sign in / Sign up

Export Citation Format

Share Document