Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pal ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

AbstractThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 707 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

ABSTRACTThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1885-1887 ◽  
Author(s):  
Toshiyuki Kaizu ◽  
Koichi Yamaguchi
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots
Sign in / Sign up

Export Citation Format

Share Document