Formation of Ultra-low Density (≤104cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method

2008 ◽  
Vol 1 ◽  
pp. 061202 ◽  
Author(s):  
Masato Ohmori ◽  
Takuya Kawazu ◽  
Kousuke Torii ◽  
Takuji Takahashi ◽  
Hiroyuki Sakaki
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Molecular Beam Epitaxy Method

Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process

2010 ◽  
Vol 49 (4) ◽  
pp. 041201 ◽  
Author(s):  
Ryosuke Kubota ◽  
Toshiharu Saiki ◽  
Philippe Regreny ◽  
Aziz Benamrouche ◽  
Michel Gendry
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Annealing Process ◽  
Low Density ◽  
Inas Quantum Dots

Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

2006 ◽  
Vol 89 (12) ◽  
pp. 123112 ◽  
Author(s):  
E. Dupuy ◽  
P. Regreny ◽  
Y. Robach ◽  
M. Gendry ◽  
N. Chauvin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Self Assembled

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pal ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

AbstractThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy

2012 ◽  
Vol 442 ◽  
pp. 12-15
Author(s):  
Zhan Guo Li ◽  
Ming Hui You ◽  
Guo Jun Liu ◽  
Xin Gao ◽  
Lin Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Layer Growth ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Temperature Growth ◽  
Spacer Layer

We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam epitaxy,with emission wavelength up to 1.3 µm at room temperature were achieved. The QDs density are sensitive to growth temperature,growth rate.The optical properties of the QDs annealing temperature used after spacer layer growth that is attributed to the suppressed In segregation from the QDs into the cap layer, reduced the strain in the QDs,significant decrease of integrated PL intensity was observed as the annealing temperature increases.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 707 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

ABSTRACTThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

2000 ◽  
Vol 216 (1-4) ◽  
pp. 57-61 ◽  
Author(s):  
Q.D Zhuang ◽  
S.F Yoon ◽  
H.Q Zheng ◽  
K.H Yuan
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized
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