Synthesis of $\alpha$-Ga2O3 thin films on Au nanoparticles dispersed on sapphire substrates for epitaxial lateral overgrowth

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

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Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.01.097 ◽

2011 ◽

Vol 326 (1) ◽

pp. 200-204 ◽

Cited By ~ 6

Author(s):

Sang-il Kim ◽

Bumjoon Kim ◽

Samseok Jang ◽

A-young Kim ◽

Jihun Park ◽

...

Keyword(s):

Epitaxial Lateral Overgrowth ◽

Sapphire Substrates ◽

Lateral Overgrowth ◽

Photoresist Mask

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Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

Applied Physics Letters ◽

10.1063/1.125467 ◽

1999 ◽

Vol 75 (24) ◽

pp. 3820-3822 ◽

Cited By ~ 18

Author(s):

J. A. Smart ◽

E. M. Chumbes ◽

A. T. Schremer ◽

J. R. Shealy

Keyword(s):

Single Step ◽

Epitaxial Lateral Overgrowth ◽

Step Process ◽

Sapphire Substrates ◽

Lateral Overgrowth

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Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO 2 Nanorod-Array Patterned Sapphire Substrates by MOCVD

10.1117/12.804291 ◽

2008 ◽

Author(s):

C. H. Chiu ◽

C. L. Chao ◽

M. H. Lo ◽

Y. J. Cheng ◽

H. C. Kuo ◽

...

Keyword(s):

Light Emitting Diodes ◽

Nanorod Array ◽

Epitaxial Lateral Overgrowth ◽

Light Emitting ◽

Sapphire Substrates ◽

Lateral Overgrowth ◽

Patterned Sapphire Substrates

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Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition

Journal of Applied Crystallography ◽

10.1107/s1600576720012856 ◽

2020 ◽

Vol 53 (6) ◽

pp. 1502-1508

Author(s):

Jun-Yeob Lee ◽

Jung-Hong Min ◽

Si-Young Bae ◽

Mun-Do Park ◽

Woo-Lim Jeong ◽

...

Keyword(s):

Thin Films ◽

Electron Backscatter Diffraction ◽

Chemical Vapor ◽

Growth Conditions ◽

Epitaxial Lateral Overgrowth ◽

Organic Chemical ◽

Lateral Overgrowth ◽

Selective Area ◽

Metal Organic ◽

Backscatter Diffraction

Single-crystal gallium nitride (GaN) thin films were grown using a graphene mask via multiple epitaxial lateral overgrowth (multiple-ELOG). During the growth process, the graphene mask self-decomposed to enable the emergence of a GaN film with a thickness of several hundred nanometres. This is in contrast to selective area growth of GaN using an SiO2 mask leading to the well known hexagonal-pyramid shape under the same growth conditions. The multiple-ELOG GaN had a single-crystalline wurtzite structure corresponding to the crystallinity of the GaN template, which was confirmed with electron backscatter diffraction measurements. An X-ray diffraction rocking curve of the asymmetric 102 reflection showed that the FWHM for the multiple-ELOG GaN decreased to 405 from 540′′ for the underlying GaN template. From these results, the self-decomposition of the graphene mask during ELOG was experimentally proven to be affected by the GaN decomposition rather than the high-temperature/H2 growth conditions.

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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300002878 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 447-452

Author(s):

Zhonghai Yu ◽

M.A.L. Johnson ◽

J.D. Brown ◽

N.A. El-Masry ◽

J. F. Muth ◽

...

Keyword(s):

Single Crystal ◽

Epitaxial Lateral Overgrowth ◽

Threading Dislocations ◽

Growth Processes ◽

Mbe Growth ◽

Sapphire Substrates ◽

Lateral Overgrowth ◽

Movpe Growth ◽

Gan Film ◽

Growth Experiments

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

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