Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial $\pmb{\beta}$ -Ga2O3 Grown by MOVPE

2019 ◽  
Author(s):  
Saud Bin Anooz ◽  
Andreas Popp ◽  
Raimund Gruneberg ◽  
Andreas Fiedler ◽  
Klaus Irmscher ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Miscut Angle

scholarly journals Surface Morphology and Electrical Properties of Cu3BTC2 Thin Films Before and After Reaction with TCNQ

2018 ◽  
Vol 10 (45) ◽  
pp. 39400-39410 ◽  
Author(s):  
Konrad Thürmer ◽  
Christian Schneider ◽  
Vitalie Stavila ◽  
Raymond W. Friddle ◽  
François Léonard ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Before And After

Electrical Properties and Surface Morphology of SiOx-Pt Nano-Composite Thin Films

2010 ◽  
Vol 10 (2) ◽  
pp. 1111-1114
Author(s):  
S. K. Lim ◽  
I. S. Park ◽  
T. S. Kim ◽  
S. H. Na ◽  
J. S. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Nano Composite ◽  
Composite Thin Films

Electrical properties, structure, and surface morphology of poly(p-xylylene)–silver nanocomposites synthesized by low-temperature vapor deposition polymerization

2012 ◽  
Vol 110 (2) ◽  
pp. 413-422 ◽  
Author(s):  
Dmitry R. Streltsov ◽  
Karen A. Mailyan ◽  
Alexey V. Gusev ◽  
Ilya A. Ryzhikov ◽  
Natalia A. Erina ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Silver Nanocomposites

Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

2017 ◽  
Vol 897 ◽  
pp. 340-343 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Yoshihito Katsu ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Silicon Dioxide ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Surface Roughening ◽  
Oxide Surface ◽  
Capping Layer ◽  
Enhanced Oxidation

Surface morphology and electrical properties of silicon dioxide (SiO2) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO2 capping prior to MEO. The Ba atoms at the SiO2/SiC interface were found to diffuse to the oxide surface through the deposited SiO2 capping layer, and then the Ba density reduced to ~1014 cm-2 before stable MEO. The resulting SiO2/SiC interface showed the reduced interface state density but the insulating property of the oxides was significantly degraded.

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