Doherty Power Amplifier Design Based on Joint Adaptive Adjustment of Bias and Input Power

Author(s):  
Wei Xue ◽  
Peng Chen ◽  
Xiao-Wei Zhu ◽  
Jianfeng Zhai ◽  
Chao Yu
Author(s):  
Seyedehmarzieh Rouhani ◽  
Kasra Rouhi ◽  
Adib Abrishamifar ◽  
Majid Tayarani

This paper presents an approach to power added efficiency (PAE) increase for Quasi-Doherty power amplifier (Q-DPA) design. For this aim, active feedback is utilized instead of a passive quarter wavelength transmission line (TL) usage, which is conventionally used in the DPA schematic. PAE increase can be done by applying an accurate load modulation to the main amplifier (PAmain), especially for technologies in which output impedance of the main power amplifier (Zout,main) considerably varies in both low and high power regions. Because such precise modulation is still based on a modified TL, this approach suffers from the inherent narrowband behavior of that TL. As a consequence, expecting a wideband DPA may not be satisfied in all cases. To deal with this issue, active feedback is used to play a role in reaching PAmain, which is not saturated before, to its maximum efficiency at the highest level of received input power (Pin) in the high power region. Following Zout,main trajectories in power and frequency sweeps simultaneously just by a passive TL are not needed anymore. Still, for the sake of preventing total PAE degradation due to the consummated power by the feedback path’s power amplifier (PAfeedback) should be limited, analytical confinement is provided in this work. A comparison is made between GaAs pHEMT 0.25um MMIC technology-based conventional DPA and the proposed revised approach based-DPA to verify the mentioned approach. The proposed PA shows maximum output power of 33.4 dBm, maximum PAE of 41.6, fractional bandwidth of 11%. The Q-DPA works with a maximum power gain of 24.16.


2021 ◽  
Author(s):  
Pouya Jahanian ◽  
Azadeh Norouzi Kangarshahi

Abstract In this paper, an attempt has been made to design a Doherty power amplifier (DPA) with high-gain and wide-band. For this purpose, two peak amplifiers are used to improve the performance of the main amplifier. Main and auxiliary amplifiers with the same structure to the class-AB type and by using micro-strip lines in place of input/output and load matching networks, transmission lines and inductors of drain and gate, that minimize the losses in the DPA. The current DPA is implemented with GaN_HEMT_CLF1G0530_100v transistor and Rogers4003 substrate, which for 1GHz frequency in 0.5-1.5GHz bandwidth will be able to be at P-1dB point (this point, input power as 30dBm and output power as 47.98dBm) increase Drain efficiency and Power added efficiency (PAE) to 81.95% and 80.73%, respectively. The DPA helps to expand the back-off region and extend the linearity region, so the Peak to average power ratio (PAPR) will be 5.21dB and the Adjacent channel power ratio (ACPR) as 58.7dBc. A gain of 17.06-17.92dB was also obtained, which is significant compared to the results of similar samples.


Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Saeedeh Lotfi ◽  
Saeed Roshani ◽  
Sobhan Roshani ◽  
Maryam Shirzadian Gilan

Abstract This paper presents a new Doherty power amplifier (DPA) with harmonics suppression. A Wilkinson power divider (WPD) with open-ended and short-ended stubs is designed to suppress unwanted signals. To design the power divider in the circuit of the DPA, even and odd mode analyses are utilized. The proposed design operates at range of 1.2–1.6 GHz. The linearity of the suggested DPA is increased about 6 dBm, in comparison with the main amplifier. The designed Doherty amplifier has a power added efficiency (PAE), drain efficiency (DE) and Gain about 60, 61% and 19 dB, respectively. The designed WPD suppresses 2nd up to 14th harmonics with more than 20 dB suppression level, which is useful for suppressing unwanted harmonics in DPA design. ATF-34143 transistors (pHEMT technology) are used for this DPA amplifier design. The main amplifier has class-F topology and class-F inverse topology is used for auxiliary amplifier.


2014 ◽  
Vol 61 (2) ◽  
pp. 552-561 ◽  
Author(s):  
Wenhua Chen ◽  
Silong Zhang ◽  
Youjiang Liu ◽  
Yucheng Liu ◽  
Fadhel M. Ghannouchi

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