Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors

2011 21st International Conference on Noise and Fluctuations ◽

10.1109/icnf.2011.5994294 ◽

2011 ◽

Author(s):

Hugues Marinchio ◽

Christophe Palermo ◽

Luca Varani ◽

Pavel Shiktorov ◽

Evgenij Starikov ◽

...

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Field Effect ◽

High Electron Mobility Transistors ◽

Plasma Waves ◽

Electronic Noise ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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The consequence of continuous current branching on current-noise spectra in field-effect and high-electron mobility transistors

10.1063/1.3140448 ◽

2009 ◽

Author(s):

E. Starikov ◽

P. Shiktorov ◽

V. Gružinskis ◽

L. Varani ◽

H. Marinchio ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

High Electron Mobility Transistors ◽

Current Noise ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Continuous Current ◽

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Numerical Simulation of Plasma Waves in High-Electron-Mobility Transistors Using Kinetic Transport Model

2009 13th International Workshop on Computational Electronics ◽

10.1109/iwce.2009.5091133 ◽

2009 ◽

Author(s):

Akira Satou ◽

Victor Ryzhii ◽

Nizami Vagidov ◽

Vladimir Mitin

Keyword(s):

Numerical Simulation ◽

Electron Mobility ◽

Transport Model ◽

High Electron Mobility Transistors ◽

Plasma Waves ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates

Applied Physics Express ◽

10.7567/apex.9.114101 ◽

2016 ◽

Vol 9 (11) ◽

pp. 114101 ◽

Author(s):

Tomotaka Hosotani ◽

Taiichi Otsuji ◽

Tetsuya Suemitsu

Keyword(s):

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

physica status solidi (c) ◽

10.1002/pssc.200776572 ◽

2008 ◽

Vol 5 (1) ◽

pp. 257-260 ◽

Author(s):

H. Marinchio ◽

J. Torres ◽

G. Sabatini ◽

P. Nouvel ◽

C. Palermo ◽

...

Keyword(s):

Theoretical Investigation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Plasma Waves ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Terahertz spectroscopy of plasma waves in high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3159032 ◽

2009 ◽

Vol 106 (1) ◽

pp. 013717 ◽

Author(s):

P. Nouvel ◽

H. Marinchio ◽

J. Torres ◽

C. Palermo ◽

D. Gasquet ◽

...

Keyword(s):

Electron Mobility ◽

Terahertz Spectroscopy ◽

High Electron Mobility Transistors ◽

Plasma Waves ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

IEEE Transactions on Electron Devices ◽

10.1109/16.641380 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2038-2040 ◽

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

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High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442711 ◽

2005 ◽

Author(s):

H. Ono ◽

S. Taniguchi ◽

T. Suzuki

Keyword(s):

High Temperatures ◽

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

Electron Velocity ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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New Technologies for Improving the High Frequency Performance of AlGaN/GaN High Electron Mobility Transistors

10.1109/enics.2008.36 ◽

2008 ◽

Author(s):

J. W. Chung ◽

E. L. Piner ◽

J. C. Roberts ◽

T. Palacios

Keyword(s):

Electron Mobility ◽

High Frequency ◽

New Technologies ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Frequency Performance

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Drift velocity comparison between high‐electron mobility transistors and doped‐channel field‐effect transistors at very small dimensions

Journal of Applied Physics ◽

10.1063/1.340037 ◽

1988 ◽

Vol 63 (3) ◽

pp. 938-943 ◽

Author(s):

Kiyoyuki Yokoyama

Keyword(s):

Drift Velocity ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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