Design and implementation of high switching frequency LLC resonant converter for high power density

2015 ◽  
Author(s):  
Hwa-Pyeong Park ◽  
Hyun-Jun Choi ◽  
Jee-Hoon Jung
Keyword(s):  
Power Density ◽  
High Power ◽  
Switching Frequency ◽  
High Power Density ◽  
Resonant Converter ◽  
Design And Implementation ◽  
High Switching Frequency ◽  
Llc Resonant Converter

scholarly journals High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

2021 ◽  
Vol 11 (23) ◽  
pp. 11350
Author(s):  
Seyed Abolfazl Mortazavizadeh ◽  
Simone Palazzo ◽  
Arturo Amendola ◽  
Enzo De Santis ◽  
Dario Di Ruzza ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Frequency ◽  
High Efficiency ◽  
Resonant Converters ◽  
Switching Frequency ◽  
High Power Density ◽  
Resonant Converter ◽  
Gan Hemt ◽  
Llc Resonant Converter

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

scholarly journals Dual Interleaved LLC Converter for High Power Applications and Wide Load Range

2019 ◽  
Vol 25 (3) ◽  
pp. 4-9
Author(s):  
Michal Frivaldsky ◽  
Jan Morgos ◽  
Andrej Kanovsky
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Negative Impact ◽  
Power Converter ◽  
Switching Frequency ◽  
Resonant Converter ◽  
Load Range ◽  
High Switching Frequency ◽  
Llc Resonant Converter ◽  
Operational Range

Dual interleaved LLC resonant converter with half bridge topology of main circuit characterized by high switching frequency (500 kHz), high power density (60 W/inch3) and high efficiency (above 96 %) over entire operational range (20 %–100 %) is described. Focus was given on the practical design of power converter, which will be able to fulfil requirements on wide load range operation characterized by upcoming normative. Since proposed topology is based on dual interleaved LLC converter, the resonant component´s critical tolerance was also investigated to secure reliable and optimal operational point. Consequently, proposals for elimination of intolerance negative impact are also described. The results of theoretical analysis were verified directly through experimental measurements. Experimental results are finally compared with upcoming industrial standard 80 Plus Titanium.

Quarter-Turn Transformer Design and Optimization for High Power Density 1-MHz LLC Resonant Converter

2020 ◽  
Vol 67 (2) ◽  
pp. 1580-1591 ◽  
Author(s):  
Yu-Chen Liu ◽  
Kai-De Chen ◽  
Chen Chen ◽  
Yong-Long Syu ◽  
Guan-Wei Lin ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Power Density ◽  
Resonant Converter ◽  
Design And Optimization ◽  
Llc Resonant Converter ◽  
Transformer Design
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