scholarly journals High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

2021 ◽  
Vol 11 (23) ◽  
pp. 11350
Author(s):  
Seyed Abolfazl Mortazavizadeh ◽  
Simone Palazzo ◽  
Arturo Amendola ◽  
Enzo De Santis ◽  
Dario Di Ruzza ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Frequency ◽  
High Efficiency ◽  
Resonant Converters ◽  
Switching Frequency ◽  
High Power Density ◽  
Resonant Converter ◽  
Gan Hemt ◽  
Llc Resonant Converter

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

Compact DC-DC Power Design in Half-Bridge IGBT Driver

2013 ◽  
Vol 397-400 ◽  
pp. 1888-1892
Author(s):  
Qiu Yan Wang ◽  
Yan Liu ◽  
Ping Xu ◽  
Da Cheng Luo
Keyword(s):  
Power Density ◽  
High Power ◽  
Power Supply ◽  
High Frequency ◽  
High Efficiency ◽  
High Power Density ◽  
Simple Circuit ◽  
Dc Power ◽  
Magnetic Cores ◽  
Drive Signals

The integrated half-bridge IGBT driver need compact, high efficiency and high power density isolated DC-DC power supply, a set of two magnetic cores share a high-frequency full-bridge switches are designed. A simple circuit generates four channel drive signals, without isolation, to achieve compact on-board power supply and the best combination with the integrated half-bridge IGBT driver. The key signals are simulated, and experimental results show that the power supply is simple, reliable.

scholarly journals Dual Interleaved LLC Converter for High Power Applications and Wide Load Range

2019 ◽  
Vol 25 (3) ◽  
pp. 4-9
Author(s):  
Michal Frivaldsky ◽  
Jan Morgos ◽  
Andrej Kanovsky
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Negative Impact ◽  
Power Converter ◽  
Switching Frequency ◽  
Resonant Converter ◽  
Load Range ◽  
High Switching Frequency ◽  
Llc Resonant Converter ◽  
Operational Range

Dual interleaved LLC resonant converter with half bridge topology of main circuit characterized by high switching frequency (500 kHz), high power density (60 W/inch3) and high efficiency (above 96 %) over entire operational range (20 %–100 %) is described. Focus was given on the practical design of power converter, which will be able to fulfil requirements on wide load range operation characterized by upcoming normative. Since proposed topology is based on dual interleaved LLC converter, the resonant component´s critical tolerance was also investigated to secure reliable and optimal operational point. Consequently, proposals for elimination of intolerance negative impact are also described. The results of theoretical analysis were verified directly through experimental measurements. Experimental results are finally compared with upcoming industrial standard 80 Plus Titanium.

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