Estimation of Time drift in Interface energy meters

2021 ◽  
Author(s):  
Mastanvali Shaik ◽  
Vivek Pandey ◽  
Sushrut Meshram ◽  
Sunil Kumar Aharwal ◽  
Sachala Mishra ◽  
...  
Keyword(s):  
Interface Energy ◽  
Time Drift ◽  
Estimation Of Time

Growth of hematite on (0001) and {1102} sapphire substrates

1990 ◽  
Vol 48 (4) ◽  
pp. 376-377
Author(s):  
Lisa A. Tietz ◽  
Scott R. Summerfelt ◽  
C. Barry Carter
Keyword(s):  
Imaging Techniques ◽  
Chemical Vapor ◽  
Interface Energy ◽  
Dark Field ◽  
Cation Sublattice ◽  
Sapphire Substrates ◽  
Dark Field Imaging ◽  
Weak Beam ◽  
Pressure Chemical ◽  
Interface Structures

Defects in thin films are often introduced at the substrate-film interface during the early stages of growth. The interface structures of semiconductor heterojunctions have been extensively studied because of the electrical activity of defects in these materials. Much less attention has been paid to the structure of oxide-oxide heterojunctions. In this study, the structures of the interfaces formed between hematite (α-Fe2O3) and two orientations of sapphire (α-Al2O3) are examined in relationship to the defects introduced into the hematite film. In such heterojunctions, the oxygen sublattice is expected to have a strong influence on the epitaxy; however, defects which involve only the cation sublattice may be introduced at the interface with little increase in interface energy.Oxide heterojunctions were produced by depositing small quantities of hematite directly onto electrontransparent sapphire substrates using low-pressure chemical vapor deposition. Prior to deposition, the ionthinned substrates were chemically cleaned and annealed at 1400°C to give “clean”, crystalline surfaces. Hematite was formed by the reaction of FeCl3 vapor with water vapor at 1150°C and 1-2 Torr. The growth of the hematite and the interface structures formed on (0001) and {102} substrates have been studied by bright-field, strong- and weak-beam dark-field imaging techniques.

PERSONALITY AND THE ESTIMATION OF TIME

1959 ◽  
Vol 9 (7) ◽  
pp. 405 ◽  
Author(s):  
H. J. EYSENCK
Keyword(s):  
Estimation Of Time

scholarly journals First Principle Study of TiB2 (0001)/γ-Fe (111) Interfacial Strength and Heterogeneous Nucleation

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1573
Author(s):  
Qin Wang ◽  
Peikang Bai ◽  
Zhanyong Zhao
Keyword(s):  
Stainless Steel ◽  
Heterogeneous Nucleation ◽  
316L Stainless Steel ◽  
Interfacial Strength ◽  
Interface Energy ◽  
Interface Fracture ◽  
Partial Density ◽  
Covalent Bonds ◽  
Tib2 Particles ◽  
Adhesion Work

TiB2/316L stainless steel composites were prepared by selective laser melting (SLM), and the adhesion work, interface energy and electronic structure of TiB2/γ-Fe interface in TiB2/316L stainless steel composites were investigated to explore the heterogeneous nucleation potential of γ-Fe grains on TiB2 particles using first principles. Six interface models composed of three different stacking positions and two different terminations were established. The B-terminated-top 2 site interface (“B-top 2”) was the most stable because of the largest adhesion work, smallest interfacial distances, and smallest interfacial energy. The difference charge density and partial density of states indicated that a large number of strong Fe-B covalent bonds were formed near the “B-top 2” interface, which increased the stability of interface. Fracture analysis revealed that the bonding strength of the “B-top 2” interface was higher than that of the Fe matrix, and it was difficult to fracture at the interface. The interface energy at the Ti-poor position in the “B-top 2” interface model was smaller than that of the γ-Fe/Fe melt, indicating that TiB2 had strong heterogeneous nucleation potency for γ-Fe.

Interface energy-driven indium whisker growth on ceramic substrates

2021 ◽  
Author(s):  
Shuai Li ◽  
Yushuang Liu ◽  
Peigen Zhang ◽  
Yan Zhang ◽  
Chengjie Lu ◽  
...  
Keyword(s):  
Whisker Growth ◽  
Interface Energy ◽  
Ceramic Substrates

scholarly journals Mean Field Analysis of Orientation Selective Grain Growth Driven By Interface-Energy Anisotropy

1994 ◽  
Vol 343 ◽  
Author(s):  
J. A. Floro ◽  
C. V. Thompson
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Growth ◽  
Texture Evolution ◽  
Mean Field ◽  
Orientation Distribution ◽  
Interface Energy ◽  
Abnormal Grain Growth ◽  
Field Analysis ◽  
Energy Anisotropy

ABSTRACTAbnormal grain growth is characterized by the lack of a steady state grain size distribution. In extreme cases the size distribution becomes transiently bimodal, with a few grains growing much larger than the average size. This is known as secondary grain growth. In polycrystalline thin films, the surface energy γs and film/substrate interfacial energy γi vary with grain orientation, providing an orientation-selective driving force that can lead to abnormal grain growth. We employ a mean field analysis that incorporates the effect of interface energy anisotropy to predict the evolution of the grain size/orientation distribution. While abnormal grain growth and texture evolution always result when interface energy anisotropy is present, whether secondary grain growth occurs will depend sensitively on the details of the orientation dependence of γi.

Self-avoiding random walk: A Brownian motion model with local time drift

1987 ◽  
Vol 74 (2) ◽  
pp. 271-287 ◽  
Author(s):  
J. R. Norris ◽  
L. C. G. Rogers ◽  
David Williams
Keyword(s):  
Brownian Motion ◽  
Random Walk ◽  
Local Time ◽  
Motion Model ◽  
Time Drift ◽  
Brownian Motion Model
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