Interface energy-driven indium whisker growth on ceramic substrates

2021 ◽  
Author(s):  
Shuai Li ◽  
Yushuang Liu ◽  
Peigen Zhang ◽  
Yan Zhang ◽  
Chengjie Lu ◽  
...  
Keyword(s):  
Whisker Growth ◽  
Interface Energy ◽  
Ceramic Substrates

Interface Energy-driven Indium Whisker Growth on Ceramic Substrates 

2021 ◽  
Author(s):  
Shuai Li ◽  
Yushuang Liu ◽  
Peigen Zhang ◽  
Yan Zhang ◽  
Chengjie Lu ◽  
...  
Keyword(s):  
Whisker Growth ◽  
Interface Energy ◽  
Mitigation Strategy ◽  
Max Phase ◽  
Number Density ◽  
Ceramic Substrates ◽  
Liquid Indium ◽  
Reliability Of Electronics

Abstract The mechanism behind spontaneous growth of metal whiskers is essential to develop lead-free whisker mitigation strategy for the sake of long-term reliability of electronics, and has been sought for several decades. However, a consensus about it still lacks, and a host of factors influencing the phenomenon have been investigated, but the role of interface energy has not been paid adequate attention. In this study, the whisker growth propensities of ball-milled Ti2InC/In and non-MAX phase TiC/In and SiC/In are comparatively studied in the terms of the wettability, thermal behavior and crystal structures. The wetting angles of indium with Ti2InC, TiC, and SiC (144.4°, 155.7°, and 142.2°, respectively) are large and quite close, indicating the poor wettability between liquid indium and the three ceramics. The thermal behaviors of all the three systems have obvious changes after ball milling. The number density of indium whiskers on ball-milled Ti2InC are significantly greater than those on the TiC and SiC substrates, which is explained based on interface energy and the crystal structure difference of the ceramic substrates.

Growth of hematite on (0001) and {1102} sapphire substrates

1990 ◽  
Vol 48 (4) ◽  
pp. 376-377
Author(s):  
Lisa A. Tietz ◽  
Scott R. Summerfelt ◽  
C. Barry Carter
Keyword(s):  
Imaging Techniques ◽  
Chemical Vapor ◽  
Interface Energy ◽  
Dark Field ◽  
Cation Sublattice ◽  
Sapphire Substrates ◽  
Dark Field Imaging ◽  
Weak Beam ◽  
Pressure Chemical ◽  
Interface Structures

Defects in thin films are often introduced at the substrate-film interface during the early stages of growth. The interface structures of semiconductor heterojunctions have been extensively studied because of the electrical activity of defects in these materials. Much less attention has been paid to the structure of oxide-oxide heterojunctions. In this study, the structures of the interfaces formed between hematite (α-Fe2O3) and two orientations of sapphire (α-Al2O3) are examined in relationship to the defects introduced into the hematite film. In such heterojunctions, the oxygen sublattice is expected to have a strong influence on the epitaxy; however, defects which involve only the cation sublattice may be introduced at the interface with little increase in interface energy.Oxide heterojunctions were produced by depositing small quantities of hematite directly onto electrontransparent sapphire substrates using low-pressure chemical vapor deposition. Prior to deposition, the ionthinned substrates were chemically cleaned and annealed at 1400°C to give “clean”, crystalline surfaces. Hematite was formed by the reaction of FeCl3 vapor with water vapor at 1150°C and 1-2 Torr. The growth of the hematite and the interface structures formed on (0001) and {102} substrates have been studied by bright-field, strong- and weak-beam dark-field imaging techniques.

Contrasting whisker growth dynamics within the phocid lineage

2020 ◽  
Vol 634 ◽  
pp. 231-236 ◽  
Author(s):  
EA McHuron ◽  
T Williams ◽  
DP Costa ◽  
C Reichmuth
Keyword(s):  
Whisker Growth ◽  
Growth Dynamics

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Root Cause Analysis of a Connector Time-Delayed Fracture

2015 ◽  
Author(s):  
Prabjit Singh ◽  
Ying Yu ◽  
Robert E. Davis
Keyword(s):  
Printed Circuit Board ◽  
Ceramic Substrate ◽  
Circuit Board ◽  
Delayed Fracture ◽  
Ceramic Substrates ◽  
Printed Circuit ◽  
Root Cause ◽  
Chip Carrier ◽  
Electrical Connections ◽  
Grain Boundary Grooves

Abstract A land-grid array connector, electrically connecting an array of plated contact pads on a ceramic substrate chip carrier to plated contact pads on a printed circuit board (PCB), failed in a year after assembly due to time-delayed fracture of multiple C-shaped spring connectors. The land-grid-array connectors analyzed had arrays of connectors consisting of gold on nickel plated Be-Cu C-shaped springs in compression that made electrical connections between the pads on the ceramic substrates and the PCBs. Metallography, fractography and surface analyses revealed the root cause of the C-spring connector fracture to be plating solutions trapped in deep grain boundary grooves etched into the C-spring connectors during the pre-plating cleaning operation. The stress necessary for the stress corrosion cracking mechanism was provided by the C-spring connectors, in the land-grid array, being compressed between the ceramic substrate and the printed circuit board.

SEM/EDS Characterization of Uncommon Metal Whiskers and Determination of Underlying Growth Mechanisms

2018 ◽  
Author(s):  
D. Basak ◽  
L. H. Ponce
Keyword(s):  
Reliability Analysis ◽  
Case Studies ◽  
Whisker Growth ◽  
Innovation Systems ◽  
Growth Mechanisms ◽  
Crystal Oscillator ◽  
Analysis Laboratory ◽  
Investigative Techniques

Abstract Two case-studies on uncommon metals whiskers, performed at the Reliability Analysis Laboratory (RAL) of Northrop Grumman Innovation Systems, are presented. The components analyzed are an Oven Controlled Crystal Oscillator (OCXO) and an Electromechanical Relay. Investigative techniques were used to determine the chemical and physical makeup of the metal whiskers and develop an understanding of the underlying effects and mechanisms that caused the conditions conducive to whisker growth.

scholarly journals First Principle Study of TiB2 (0001)/γ-Fe (111) Interfacial Strength and Heterogeneous Nucleation

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1573
Author(s):  
Qin Wang ◽  
Peikang Bai ◽  
Zhanyong Zhao
Keyword(s):  
Stainless Steel ◽  
Heterogeneous Nucleation ◽  
316L Stainless Steel ◽  
Interfacial Strength ◽  
Interface Energy ◽  
Interface Fracture ◽  
Partial Density ◽  
Covalent Bonds ◽  
Tib2 Particles ◽  
Adhesion Work

TiB2/316L stainless steel composites were prepared by selective laser melting (SLM), and the adhesion work, interface energy and electronic structure of TiB2/γ-Fe interface in TiB2/316L stainless steel composites were investigated to explore the heterogeneous nucleation potential of γ-Fe grains on TiB2 particles using first principles. Six interface models composed of three different stacking positions and two different terminations were established. The B-terminated-top 2 site interface (“B-top 2”) was the most stable because of the largest adhesion work, smallest interfacial distances, and smallest interfacial energy. The difference charge density and partial density of states indicated that a large number of strong Fe-B covalent bonds were formed near the “B-top 2” interface, which increased the stability of interface. Fracture analysis revealed that the bonding strength of the “B-top 2” interface was higher than that of the Fe matrix, and it was difficult to fracture at the interface. The interface energy at the Ti-poor position in the “B-top 2” interface model was smaller than that of the γ-Fe/Fe melt, indicating that TiB2 had strong heterogeneous nucleation potency for γ-Fe.

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