Radiation Performance Enhancement of THz Double-Crossed Bow-tie on a Lens Antenna by Adding Optimum Matching Layer

Author(s):  
Farida Ulfah ◽  
Catur Apriono
Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 4015 ◽  
Author(s):  
Jeong ◽  
Park ◽  
Lee

This paper presents the broadband antenna for the microwave radiometric sensing of internal body temperature. For broadband operation, the bow-tie antenna was designed and backed with a cylindrical cavity, which decreased environmental electromagnetic interference and also improved the directivity of the antenna. The broadband impedance-transforming balun in microstrip form was also designed to feed the bow-tie antenna, and was located inside the cavity. An impedance-matching dielectric layer (IMDL) was introduced on top of the bow-tie antenna, for impedance match with the human body with high permittivity. The fabricated antenna was measured in free space with the IMDL removed, showing an input reflection coefficient lower than −10 dB from 2.64 to > 3.60 GHz with antenna gain over 6.0 dBi and radiation efficiency over 74.7% from 2.7 to 3.5 GHz. The IMDL was re-installed on the cavity-backed bow-tie antenna to measure the antenna performance for the human head with relative permittivity of about 40. The measured reflection coefficient was as low as −28.9 dB at 2.95 GHz and lower than −10 dB from 2.65 to > 3.5 GHz. It was also shown that the designed antenna recovered a good impedance match by adjusting the permittivity and thickness of the IMDL for the different parts of the human body with different permittivities.


2003 ◽  
Author(s):  
M. Bar-Eli ◽  
O. Lowengart ◽  
J. Goldberg ◽  
S. Epstein ◽  
R. D. Fosbury

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2019 ◽  
Vol 13 (3) ◽  
pp. 5242-5258
Author(s):  
R. Ravivarman ◽  
K. Palaniradja ◽  
R. Prabhu Sekar

As lined, higher transmission ratio drives system will have uneven stresses in the root region of the pinion and wheel. To enrich this agility of uneven stresses in normal-contact ratio (NCR) gearing system, an enhanced system is desirable to be industrialized. To attain this objective, it is proposed to put on the idea of modifying the correction factor in such a manner that the bending strength of the gearing system is improved. In this work, the correction factor is modified in such a way that the stress in the root region is equalized between the pinion and wheel. This equalization of stresses is carried out by providing a correction factor in three circumstances: in pinion; wheel and both the pinion and the wheel. Henceforth performances of this S+, S0 and S- drives are evaluated in finite element analysis (FEA) and compared for balanced root stresses in parallel shaft spur gearing systems. It is seen that the outcomes gained from the modified drive have enhanced performance than the standard drive.


2011 ◽  
Vol 4 (4) ◽  
pp. 377-386
Author(s):  
B.Palpandi B.Palpandi ◽  
◽  
Dr. G.Geetharamani Dr. G.Geetharamani ◽  
J.Arun Pandian

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