Influence of diffusion on solid-state bonding for micro-bumps at low temperatures

Author(s):  
Ying-Hui Wang ◽  
Tadatomo Suga
2016 ◽  
Vol 22 (3) ◽  
pp. 257-263 ◽  
Author(s):  
K. Pongmorakot ◽  
S. Nambu ◽  
Y. Shibuta ◽  
T. Koseki

2021 ◽  
Vol 67 ◽  
pp. 35-45
Author(s):  
Shuangjie Zhang ◽  
Wei Wang ◽  
Shibo Ma ◽  
Qiang Li

1991 ◽  
Vol 179-181 ◽  
pp. 1166
Author(s):  
K. Abe ◽  
T. Higuchi ◽  
Y. Fujino

2003 ◽  
Vol 2003 (0) ◽  
pp. 123-124
Author(s):  
Takashi SATO ◽  
Yoshinobu MOTOHASHI ◽  
Takaaki SAKUMA ◽  
Kazuyoshi WASEDA

1953 ◽  
Author(s):  
S. Storchheim ◽  
J.L. Zambrow ◽  
H.H. Hausner

2003 ◽  
Vol 18 (1) ◽  
pp. 4-7 ◽  
Author(s):  
Y. C. Sohn ◽  
Jin Yu ◽  
S. K. Kang ◽  
W. K. Choi ◽  
D. Y. Shih

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.


2018 ◽  
Vol 6 (24) ◽  
pp. 11405-11415 ◽  
Author(s):  
L. Q. Lu ◽  
N. Schriever ◽  
J. Th. M. De Hosson ◽  
Y. T. Pei

In this work we developed a solid-state-growth approach for the synthesis of 3D interconnected bicontinuous nanoporous graphene (NPG) with the aid of nanoporous Ni templates at low temperatures (below 800 °C).


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