A Novel Fourth-Order Multi-Bit Quantization ΣΔ Modulator

Author(s):  
Tiechao Yang ◽  
Yu Jin ◽  
Chi Xu ◽  
Xuebing Wu ◽  
Duli Yu
Keyword(s):  
Author(s):  
Shuoyang Li ◽  
Xiao Zhao ◽  
Liyuan Dong ◽  
Lanya Yu ◽  
Xilong Zhang
Keyword(s):  

2013 ◽  
Vol 694-697 ◽  
pp. 971-975
Author(s):  
Wei Lang ◽  
Pei Yuan Wan

This paper presents the system design of a high order single loop electromechanical ΣΔ accelerometer. The noise-coupled is employed in the fourth-order feed-forward micro-accelerometer ΣΔ modulator to provide fifth-order noise shaping performance. It is implemented without degrading the loop stability and without changing original loop coefficients of the fourth-order accelerometer.


2012 ◽  
Vol 503 ◽  
pp. 303-307
Author(s):  
Peng Fei Wang ◽  
Yuan Yuan ◽  
Dong Bo Wang ◽  
Xiao Wei Liu ◽  
Jun'an Liu

This paper presents a fourth-order sigma delta (ΣΔ)modulator applied in micro-inertial sensors. After a introduction of sigma-delta modulator and its application in micro-inertial sensors, the system-level analysis and design is given and the gain coefficients is calculated. By the use of root locus, the stability of high order ΣΔ modulator is analyzed and it is got the minimum value of quantizer gain k is 0.287. The simulation shows that the signal to noise ratio (SNR) is 121.6 dB and the effective number of bits (ENOB) is 19.91 bits. When input level is smaller than -6 dBFs, the quantizer and integrators would not be overload and work well.


2013 ◽  
Vol 562-565 ◽  
pp. 1058-1062 ◽  
Author(s):  
Hong Lin Xu ◽  
Jia Jun Zhou ◽  
Jian Yang ◽  
Song Chen ◽  
Zhi Qiang Gao ◽  
...  

In this paper, a low-distortion fourth-order bandpass sigma-delta (ΣΔ) modulator is proposed based on a switched-capacitor resonator which employs double-sampling technique to relax the requirements for circuits and reduce opamp power consumption and chip area. The modulator is based on the low-distortion low pass ΣΔ modulator. The system level simulation results compare between the low-distortion architecture and the traditional one is given. The full differential circuit applying two-path technique is implemented with TSMC0.18µm CMOS process. It achieves a peak SNR (signal-to-noise ratio) of 85.9dB and DR (dynamic range) of 91dB with 200 kHz bandwidth centered at 20MHz which are better than the conventional bandpass ΣΔ modulator.


2011 ◽  
Vol 483 ◽  
pp. 422-426
Author(s):  
Yao Guang Li ◽  
Xiao Wei Liu ◽  
Yan Xiao ◽  
Yun Tao Liu

This paper reports on a system level design and analysis of a single-loop fourth-order sigma-delta (ΣΔ) accelerometer. Compared with a second-order single-loop ΣΔ modulator (ΣΔM) formed by the sensing element here the sensing element is cascaded with two extra electronic integrators to form the fourth ΣΔM, which has the advantages of better signal to quantization noise ratio (SQNR). System level simulation results indicate that the SQNR is 96.86 dB, and the effective number of bits (ENOB) is 15.8 bits when the over sampling ratio (OSR) is 128. Stability of the system is analyzed by root locus method based on the linear model established in this work, and the minimum gain of the quantizer Kq min is about 0.375.


2012 ◽  
Vol 503 ◽  
pp. 207-210
Author(s):  
Wen Yan Liu ◽  
Bin Zhang ◽  
Long Chen ◽  
Chao Gao ◽  
Xiao Wei Liu

This paper reports on a system level design and analysis of a mash fourth-order sigma-delta (ΣΔ) modulator. Compared with a high-order single-loop ΣΔ modulator (ΣΔM), there’s no need to consider about the system stability of a mash ΣΔM, which has the advantages of better signal to quantization noise ratio (SQNR). System level simulation results indicate that the SQNR is 122.0 dB, and the effective number of bits (ENOB) is 19.97 bits when the over sampling ratio (OSR) is 128.


1973 ◽  
Vol 16 (2) ◽  
pp. 201-212 ◽  
Author(s):  
Elizabeth Carrow ◽  
Michael Mauldin

As a general index of language development, the recall of first through fourth order approximations to English was examined in four, five, six, and seven year olds and adults. Data suggested that recall improved with age, and increases in approximation to English were accompanied by increases in recall for six and seven year olds and adults. Recall improved for four and five year olds through the third order but declined at the fourth. The latter finding was attributed to deficits in semantic structures and memory processes in four and five year olds. The former finding was interpreted as an index of the development of general linguistic processes.


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