σδ modulator
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Author(s):  
Slim Tahri ◽  
◽  
Nizar Khitouni ◽  
Med Salim Bouhlel ◽  
◽  
...  

This work presents the design of a new 2-2 programmable sigma delta modulator architecture, for different applications, this transformation design of the ΣΔ modulator low-pass, band-pass and high-pass or vice versa with loopbacks addition, which improved the linearity of the converter and reduced the quantization noise. In this work, the MASH structure enables the implementation of stable and high-order modulator. This makes low voltage and low power applications ideal. The simulation result for sigma delta modulator for biomedical applications exhibit a signal to noise ratio is 95 dB @ 250Hz bandwidth and a 75dB @ 200KHz ,85dB @1MHz for pass band modulator. The SNR is about 70dB for 5MHz bandwidth and for high pass application. This tool will allow a development contribution and characterize a system optimization set from the start while remaining at a high level of design that is suitable for electronic systems and models VHDL-AMS, RF, Biomedical.


2021 ◽  
Author(s):  
Tiechao Yang ◽  
Yu Jin ◽  
Chi Xu ◽  
Xuebing Wu ◽  
Duli Yu
Keyword(s):  

2021 ◽  
Author(s):  
Mateus Castro ◽  
Raphael Souza ◽  
Agord ◽  
Leandro Manera ◽  
Eduardo Lima

Author(s):  
Shuoyang Li ◽  
Xiao Zhao ◽  
Liyuan Dong ◽  
Lanya Yu ◽  
Xilong Zhang
Keyword(s):  

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 1973
Author(s):  
Chunge Ju ◽  
Xiang Li ◽  
Junjun Zou ◽  
Qi Wei ◽  
Bin Zhou ◽  
...  

This paper presents the design and implementation of an auto-tuning continuous-time bandpass sigma-delta (ΣΔ) modulator for micro-electromechchanical systems (MEMS) gyroscope readout systems. Its notch frequency can well match the input signal frequency by adding a signal observation to the traditional ΣΔ modulator. The filter of the observation adopts the same architecture as that of the traditional ΣΔ modulator, allowing the two filters to have the same response to input signal change, which is converted into a control voltage on metal-oxide semiconductor (MOS) resistance in the filters. The automatic tuning not only works to solve the mismatch problem caused by process error and temperature variation, but can also be applied to the interface circuit of gyroscopes with different resonant frequencies. The circuit is implemented in a 0.18-μm complementary metal-oxide semiconductor (CMOS) process with a core area of 2.4 mm2. The improved modulator achieves a dynamic range of 106 dB, a noise floor below 120 dB and a maximum signal-to-noise and distortion ratio (SNDR) of 86.4 dB. The tuning capability of the chip is relatively stable under input signals from 6 to 15 kHz at temperatures ranging from −45 to 60 °C.


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