Laser ablated nanostructured zinc sulphide thin films for optoelectronics device applications

2009 ◽  
Author(s):  
S.R. Chalana ◽  
R. Vinodkumar ◽  
A.P. Detty ◽  
I. Navas ◽  
K.S. Sreedevi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Sulphide ◽  
Device Applications

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Mixed Nb2O5:MoO3 (95:5 and 85:15) thin films and their properties for electrochromic device applications

2016 ◽  
Vol 27 (8) ◽  
pp. 7809-7821 ◽  
Author(s):  
N. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
R. Balasubramaniam ◽  
Y. Kuroki
Keyword(s):  
Thin Films ◽  
Electrochromic Device ◽  
Device Applications

scholarly journals The improvement of CoZrTaB thin films on different substrates for flexible device applications

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025139
Author(s):  
Yanze Wu ◽  
I-Chen Yeng ◽  
Hongbin Yu
Keyword(s):  
Thin Films ◽  
Flexible Device ◽  
Device Applications

Na0.5K0.5NbO3 thin films for voltage controlled acoustoelectric device applications

2002 ◽  
Vol 80 (17) ◽  
pp. 3171-3173 ◽  
Author(s):  
Choong-Rae Cho ◽  
Ilia Katardjiev ◽  
Michael Grishin ◽  
Alex Grishin
Keyword(s):  
Thin Films ◽  
Device Applications
Sign in / Sign up

Export Citation Format

Share Document