A GaN HEMTs half-bridge driver with bandgap reference comparator clamping for high-frequency DC-DC converter

2017 ◽  
Author(s):  
Renhui Yan ◽  
Shengpeng Tang ◽  
Jianxiong Xi ◽  
Lenian He ◽  
Kexu Sun
Keyword(s):  
High Frequency ◽  
Bandgap Reference ◽  
Gan Hemts

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts

scholarly journals Scaling and high-frequency performance of AlN/GaN HEMTs

2011 ◽  
Author(s):  
Xi Luo ◽  
Subrata Halder ◽  
Walter R. Curtice ◽  
James C. M. Hwang ◽  
Kelson D. Chabak ◽  
...  
Keyword(s):  
High Frequency ◽  
Gan Hemts ◽  
High Frequency Performance

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

High Frequency Noise in GaN HEMTs

2009 ◽  
Author(s):  
J. Mateos ◽  
S. Pérez ◽  
D. Pardo ◽  
T. González ◽  
Massimo Macucci ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
High Frequency Noise ◽  
Gan Hemts

Optimization of AlGaN/GaN HEMTs for high frequency operation

2006 ◽  
Vol 203 (7) ◽  
pp. 1845-1850 ◽  
Author(s):  
T. Palacios ◽  
Y. Dora ◽  
A. Chakraborty ◽  
C. Sanabria ◽  
S. Keller ◽  
...  
Keyword(s):  
High Frequency ◽  
Gan Hemts ◽  
High Frequency Operation

Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications

2013 ◽  
Vol 50 (3) ◽  
pp. 323-332 ◽  
Author(s):  
T. Kikkawa ◽  
M. Kanamura ◽  
T. Ohki ◽  
K. Imanishi ◽  
K. Watanabe ◽  
...  
Keyword(s):  
High Power ◽  
High Frequency ◽  
Current Status ◽  
Future Prospects ◽  
Gan Hemts

scholarly journals Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

2011 ◽  
Vol 3 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Olivier Jardel ◽  
Guillaume Callet ◽  
Jérémy Dufraisse ◽  
Michele Piazza ◽  
Nicolas Sarazin ◽  
...  
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Gan Hemts ◽  
Load Pull ◽  
Interesting Alternative

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

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