A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress

1999 ◽  
Vol 592 ◽  
Author(s):  
Hao Guan ◽  
Zhen Xu ◽  
Byung Jin Cho ◽  
M. F. Li ◽  
Y. D. He
Keyword(s):  
Damage Model ◽  
Gate Oxide ◽  
Interface State ◽  
Hot Electron ◽  
Hot Carriers ◽  
Hot Carrier ◽  
Interface Damage ◽  
Breakdown Mechanism ◽  
State Generation ◽  
Thin Gate Oxide

ABSTRACTThe quasi-breakdown (QB) in ultra thin gate oxide is investigated through the observation of defect generation during high field F-N stress and substrate hot hole and hot electron stresses. The interface trap density increases during stress and reaches to a same critical amount at the onset point of QB regardless of stress current density and stressing carrier type. The experiments also show that hot carriers are much more effective to trigger QB than F-N electrons at the same current level. This can be ascribed to the fact that hot carrier has much higher interface state generation rate than F-N electron does. All results consistently support the interface damage model for the QB occurrence.

Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Hyungshin Kwon ◽  
Hyunsang Hwang
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Interface State ◽  
Nitridation Process ◽  
Reliability Characteristics ◽  
State Generation ◽  
Device Applications ◽  
Thin Gate Oxide ◽  
Mos Device

ABSTRACTThe electrical and reliability characteristics of ultra-thin gate oxide, annealed in ND3 gas, have been investigated. Compared with a control oxide, which had been annealed in NH3, the ND3-nitrided oxide exhibits a significant reduction in charge trapping and interface state generation. The improvement of electrical and reliability characteristics can be explained by the strong Si-D bond at the Si/SiO2 interface. This nitridation process of gate dielectric using ND3 has considerable potential for future ultra large scaled integration (ULSI) device applications.

Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 423-428 ◽  
Author(s):  
Quazi Deen Mohd Khosru ◽  
Naoki Yasuda ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Gate Oxide ◽  
Interface State ◽  
State Generation ◽  
Thin Gate Oxide

scholarly journals Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

2021 ◽  
pp. 1-8
Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Brecht Truijen ◽  
Philippe Roussel ◽  
Ben Kaczer ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Interface State ◽  
Hot Carrier ◽  
State Generation ◽  
The Impact

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

scholarly journals Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Floating Body ◽  
Hot Carrier ◽  
Thin Gate Oxide

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

2009 ◽  
Vol 26 (1) ◽  
pp. 017304 ◽  
Author(s):  
Hu Shi-Gang ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Cao Yan-Rong ◽  
Chen Chi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Hot Carrier ◽  
Stress Effects ◽  
Hot Carrier Stress ◽  
Thin Gate Oxide

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 451-455 ◽  
Author(s):  
Kosuke Muraoka ◽  
Seiji Ishikawa ◽  
Hiroshi Sezaki ◽  
Tomonori Maeda ◽  
Shinichiro Kuroki
Keyword(s):  
Oxygen Concentration ◽  
Barrier Layer ◽  
Gate Oxide ◽  
Interface State ◽  
State Density ◽  
Conduction Band Edge ◽  
Low Oxygen ◽  
Barrier Layer Thickness ◽  
Thick Barrier ◽  
Thin Gate Oxide

A thickness of Ba-introduced gate oxide was controlled with the oxygen concentration and a barrier layer thickness at a post-deposition annealing. The oxidation rate becomes slower with the low oxygen concentration and the thick barrier layer, and the thin oxide of 12 nm was realized with O2 5% and 9 nm of the barrier layer. This Ba-introduced thin gate oxide resulted in the field effect mobility of 13 cm2/Vs and the interface state density of 2×1011 cm-2eV-1 at 0.25 eV below the conduction band edge of 4H-SiC.

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

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