Defects spectroscopy in SiO2 by statistical random telegraph noise analysis

2006 International Electron Devices Meeting ◽

10.1109/iedm.2006.346819 ◽

2006 ◽

Cited By ~ 25

Author(s):

R. Gusmeroli ◽

C. Monzio Compagnoni ◽

A. Riva ◽

A. S. Spinelli ◽

A. L. Lacaita ◽

...

Keyword(s):

Noise Analysis ◽

Random Telegraph Noise ◽

Telegraph Noise

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Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904891 ◽

2016 ◽

Cited By ~ 5

Author(s):

Francesco Maria Puglisi

Keyword(s):

Noise Analysis ◽

Nanoscale Devices ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Electrical Reliability

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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

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Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

Chaos Solitons & Fractals ◽

10.1016/j.chaos.2021.111533 ◽

2021 ◽

Vol 153 ◽

pp. 111533

Author(s):

Nikolaos Vasileiadis ◽

Panagiotis Loukas ◽

Panagiotis Karakolis ◽

Vassilios Ioannou-Sougleridis ◽

Pascal Normand ◽

...

Keyword(s):

Noise Analysis ◽

Resistance Switching ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Multi Level ◽

Level Resistance

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Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224354 ◽

2015 ◽

Author(s):

N. Raghavan ◽

W. H. Liu ◽

R. Thamankar ◽

M. Bosman ◽

K. L. Pey

Keyword(s):

Noise Analysis ◽

Memory Devices ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

Applied Physics Express ◽

10.7567/apex.6.084201 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084201

Author(s):

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

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Random telegraph noise analysis in time domain

Review of Scientific Instruments ◽

10.1063/1.1150519 ◽

2000 ◽

Vol 71 (4) ◽

pp. 1681-1688 ◽

Cited By ~ 61

Author(s):

Y. Yuzhelevski ◽

M. Yuzhelevski ◽

G. Jung

Keyword(s):

Time Domain ◽

Noise Analysis ◽

Random Telegraph Noise ◽

Telegraph Noise

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Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085327 ◽

2017 ◽

Cited By ~ 1

Author(s):

Elhameh Abbaspour ◽

Stephan Menzel ◽

Christoph Jungemann

Keyword(s):

Resistive Switching ◽

Noise Analysis ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Switching Devices

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Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2013.6818845 ◽

2013 ◽

Cited By ~ 6

Author(s):

Francesco M. Puglisi ◽

Paolo Pavan ◽

Andrea Padovani ◽

Luca Larcher

Keyword(s):

Noise Analysis ◽

Random Telegraph Noise ◽

Telegraph Noise

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Random telegraph noise analysis in AlOx/WOy resistive switching memories

Applied Physics Letters ◽

10.1063/1.4868383 ◽

2014 ◽

Vol 104 (10) ◽

pp. 103507 ◽

Cited By ~ 10

Author(s):

Ye Zhang ◽

Huaqiang Wu ◽

Minghao Wu ◽

Ning Deng ◽

Zhiping Yu ◽

...

Keyword(s):

Resistive Switching ◽

Noise Analysis ◽

Random Telegraph Noise ◽

Telegraph Noise

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Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703439 ◽

2010 ◽

Cited By ~ 32

Author(s):

Yuan Heng Tseng ◽

Wen Chao Shen ◽

Chia-En Huang ◽

Chrong Jung Lin ◽

Ya-Chin King

Keyword(s):

Noise Analysis ◽

Switching Behavior ◽

Electron Trapping ◽

Random Telegraph Noise ◽

Trapping Effect ◽

Telegraph Noise

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