Determination of intrinsic phonon-limited mobility and carrier transport property extraction of 4H-SiC MOSFETs

Author(s):  
M. Noguchi ◽  
T. Iwamatsu ◽  
H. Amishiro ◽  
H. Watanabe ◽  
K. Kita ◽  
...  
Author(s):  
Yukinori Morita ◽  
Hiroyuki OTA ◽  
Shinji MIGITA

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.


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2016 ◽  
Vol 55 (3S2) ◽  
pp. 03DE01
Author(s):  
Hirosato Monobe ◽  
Hai-Liang Ni ◽  
Ping Hu ◽  
Bi-Qin Wang ◽  
Ke-Qing Zhao ◽  
...  

1998 ◽  
Vol 35 (9) ◽  
pp. 679-681
Author(s):  
Hiroyuki MIYAMARU ◽  
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Akito TAKAHASHI

2008 ◽  
Vol 254 (19) ◽  
pp. 6248-6251 ◽  
Author(s):  
S. Sakamoto ◽  
T. Oshio ◽  
A. Ashida ◽  
T. Yoshimura ◽  
N. Fujimura

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