Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993633 ◽

2019 ◽

Author(s):

K. Maekawa ◽

T. Yamashita ◽

T. Yamaguchi ◽

T. Ohara ◽

A. Amo ◽

...

Keyword(s):

Threshold Voltage ◽

Voltage Distribution ◽

Memory Array ◽

Threshold Voltage Distribution

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Decision Directed Estimation of Threshold Voltage Distribution in NAND Flash Memory

IEEE Transactions on Signal Processing ◽

10.1109/tsp.2013.2295056 ◽

2014 ◽

Vol 62 (4) ◽

pp. 919-927 ◽

Author(s):

Dong-hwan Lee ◽

Wonyong Sung

Keyword(s):

Threshold Voltage ◽

Flash Memory ◽

Voltage Distribution ◽

Nand Flash Memory ◽

Threshold Voltage Distribution

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A new technique for measuring threshold voltage distribution in flash EEPROM devices

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513988 ◽

2002 ◽

Author(s):

T. Himeno ◽

N. Matsukawa ◽

H. Hazama ◽

K. Sakui ◽

M. Oshikiri ◽

...

Keyword(s):

Threshold Voltage ◽

New Technique ◽

Voltage Distribution ◽

Threshold Voltage Distribution ◽

A New Technique

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A fast test to generate flash memory threshold voltage distribution map

Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing ◽

10.1109/mtdt.1999.782687 ◽

2003 ◽

Author(s):

R. Khubchandani

Keyword(s):

Threshold Voltage ◽

Flash Memory ◽

Distribution Map ◽

Voltage Distribution ◽

Threshold Voltage Distribution

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Critical distance method for predicting the tail part of the threshold voltage distribution

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292339 ◽

2015 ◽

Author(s):

Sungman Rhee ◽

Seongwook Choi ◽

YoungJune Park

Keyword(s):

Threshold Voltage ◽

Critical Distance ◽

Voltage Distribution ◽

Distance Method ◽

Tail Part ◽

Threshold Voltage Distribution

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Modeling of Threshold Voltage Distribution in NAND Flash Memory: A Monte Carlo Method

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2593913 ◽

2016 ◽

Vol 63 (9) ◽

pp. 3527-3532 ◽

Author(s):

Haibo Li

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Threshold Voltage ◽

Flash Memory ◽

Voltage Distribution ◽

Nand Flash Memory ◽

Threshold Voltage Distribution

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Extractive method of threshold voltage distribution in floating gate NAND flash memory by using the charge pumping technique

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418383 ◽

2008 ◽

Author(s):

Sung-Ho Bae ◽

Hyuck-In Kwon ◽

Jung-Ryul Ahn ◽

Jae-Chul Om ◽

Jong-Ho Lee

Keyword(s):

Threshold Voltage ◽

Flash Memory ◽

Floating Gate ◽

Voltage Distribution ◽

Nand Flash Memory ◽

Charge Pumping ◽

Threshold Voltage Distribution

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The Method of Predicting Retention Threshold Voltage Distribution for NAND Flash Memory Based on Back-Propagation Neural Network

2019 IEEE 11th International Memory Workshop (IMW) ◽

10.1109/imw.2019.8739277 ◽

2019 ◽

Author(s):

Kunliang Wang ◽

Gang Du ◽

Zhiyuan Lun ◽

Xiaoyan Liu

Keyword(s):

Neural Network ◽

Threshold Voltage ◽

Flash Memory ◽

Back Propagation ◽

Back Propagation Neural Network ◽

Voltage Distribution ◽

Nand Flash Memory ◽

Threshold Voltage Distribution

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A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory

Microelectronics Reliability ◽

10.1016/j.microrel.2020.113897 ◽

2020 ◽

Vol 114 ◽

pp. 113897

Author(s):

Debao Wei ◽

Xiaoyu Chen ◽

Hua Feng ◽

Liyan Qiao ◽

Xiyuan Peng

Keyword(s):

Threshold Voltage ◽

Flash Memory ◽

High Efficiency ◽

Test Method ◽

Voltage Distribution ◽

Nand Flash Memory ◽

Threshold Voltage Distribution

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Extremely uniform threshold voltage distribution of GaAs FET made on LEC-grown crystals

Electronics Letters ◽

10.1049/el:19850738 ◽

1985 ◽

Vol 21 (22) ◽

pp. 1040 ◽

Author(s):

J. Kasahara ◽

M. Arai ◽

N. Watanabe

Keyword(s):

Threshold Voltage ◽

Voltage Distribution ◽

Threshold Voltage Distribution

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Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of nand Flash Memory Devices and Floating-Gate Impurity Concentration

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2165073 ◽

2011 ◽

Vol 58 (11) ◽

pp. 3712-3719 ◽

Author(s):

Riichiro Shirota ◽

Yoshinori Sakamoto ◽

Hung-Ming Hsueh ◽

Jian-Ming Jaw ◽

Wen-Chuan Chao ◽

...

Keyword(s):

Threshold Voltage ◽

Flash Memory ◽

Impurity Concentration ◽

Floating Gate ◽

Memory Devices ◽

Voltage Distribution ◽

Nand Flash Memory ◽

Threshold Voltage Distribution

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