In this paper, we propose a novel scheme for controlling the group velocity of transmitted and reflected pulse from defect medium doped with four-level InGaN/GaN quantum dot nanostructure. Quantum dot nanostructure is designed numerically by Schrödinger and Poisson equations which solve self consistently. By size control of quantum dot and external voltage, one can design a four-level quantum dot with appropriate energy levels which can be suitable for controlling the group velocity of pulse transmission and reflection from defect slab with terahertz signal field. It is found that in the presence and absence of terahertz signal field the behaviors of transmission and reflection pulses are completely different. Moreover, it is shown that for strong terahertz signal field, by changing the thickness of the slab, simultaneous peak and dip for transmission and reflection pulse are obtained.