A CMOS Variable-gain Fully-differential Transimpedance Amplifier for Multimedia Data Links

2009 ◽  
Author(s):  
Roger Y. Chen ◽  
Ming-Jen Chang
Keyword(s):  
Multimedia Data ◽  
Transimpedance Amplifier ◽  
Variable Gain ◽  
Fully Differential ◽  
Data Links

A Fully Differential Variable Gain Amplifier for Portable Impedance Sensing Applications

2019 ◽  
Vol 7 ◽  
Author(s):  
Jorge Pérez Bailón ◽  
Jaime Ramírez-Angulo ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Active Area ◽  
Variable Gain Amplifier ◽  
Cmos Process ◽  
Current Steering ◽  
Impedance Sensing ◽  
Variable Gain ◽  
Fully Differential ◽  
Sensing Applications ◽  
Constant Bandwidth

This paper presents a Variable Gain Amplifier (VGA) designed in a 0.18 μm CMOS process to operate in an impedance sensing interface. Based on a transconductance-transimpedance (TC-TI) approach with intermediate analog-controlled current steering, it exhibits a gain ranging from 5 dB to 38 dB with a constant bandwidth around 318 kHz, a power consumption of 15.5 μW at a 1.8 V supply and an active area of 0.021 mm2.

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

THE DIFFERENTIAL DIFFERENCE OPERATIONAL FLOATING AMPLIFIER: NEW CMOS REALIZATIONS AND APPLICATIONS

2009 ◽  
Vol 18 (07) ◽  
pp. 1287-1308 ◽  
Author(s):  
EMAN A. SOLIMAN ◽  
SOLIMAN A. MAHMOUD
Keyword(s):  
Analog Circuits ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Variable Gain Amplifiers ◽  
Variable Gain ◽  
Fully Differential ◽  
Filter Performance ◽  
Low Pass ◽  
Band Pass

This paper presents different novel CMOS realizations for the differential difference operational floating amplifier (DDOFA). The DDOFA was first introduced in Ref. 1 and was used to realize different analog circuits like integrators, filters and variable gain amplifiers. New CMOS realizations for the DDOFA are introduced in this literature. Furthermore the DDOFA is modified to realize a fully differential current conveyor (FDCC). Novel CMOS realizations of the FDCC are presented. The FDCC is used to realize second-order band pass–low-pass filter. Performance comparisons between the different realizations of the DDOFA and FDCC are given in this literature. PSPICE simulations of the overall proposed circuits are given using 0.25 μm CMOS Technology from TMSC MOSIS model and dual supply voltages of ±1.5 V.

scholarly journals A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2680
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki
Keyword(s):  
Phase Noise ◽  
Cmos Technology ◽  
High Gain ◽  
Transimpedance Amplifier ◽  
Short Term ◽  
Microelectromechanical System ◽  
Fully Differential ◽  
Mems Oscillator ◽  
Measured Input ◽  
Mode Resonator

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

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