Application of indium ion implantation for halo doping: experimental and simulation results for advanced CMOS devices

2003 ◽  
Author(s):  
N. Variam ◽  
S. Mehta ◽  
T. Feudel ◽  
M. Horstmann ◽  
C. Krueger ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Simulation Results ◽  
Indium Ion

An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results

2004 ◽  
Vol 66 (2-3) ◽  
pp. 219-230 ◽  
Author(s):  
Clemens Heitzinger ◽  
Andreas Hössinger ◽  
Siegfried Selberherr
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Three Dimensional ◽  
Simulation Results

Crystallization, Diffusion and Phase Separation in Sapphire Amorphised by Indium Ion Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
D. X. Cao ◽  
D. K. Sood ◽  
A. P. Pogany
Keyword(s):  
Phase Separation ◽  
Ion Implantation ◽  
Isothermal Annealing ◽  
Amorphous Layer ◽  
Dose Dependence ◽  
Rapid Diffusion ◽  
Amorphous Surface ◽  
Indium Ion

ABSTRACTIndium implantation into a-axis sapphire to peak concentrations of 8–45 mol % In produces amorphous surface layers.Migration of In during isothermal annealing at 600°C shows a strong ion dose dependence. For a dose of 6×1016In/cm2, two distinct types of In migration are seen - a) rapid diffusion of In within amorphous Al2O3 and b) diffusion of In into crystalline Al2O3 underlying the amorphous layer. For doses lower than 3×1016In/cm2 , no such migration of In is seen under identical anneal conditions. However, In undergoes phase separation into crystalline In2O3 particles embedded in amorphous Al2O3 at all doses.

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

2014 ◽  
Vol 778-780 ◽  
pp. 808-811
Author(s):  
Xiao Chuan Deng ◽  
Cheng Yuan Rao ◽  
Jin Wei ◽  
Hua Ping Jiang ◽  
Miao Miao Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Parallel Plane ◽  
Simulation Results ◽  
Schottky Rectifier ◽  
Novel Variation

A novel variation of lateral etching junction termination extension (VLE-JTE) for Silicon carbide (SiC) power junction barrier Schottky rectifier (JBS) using a single mask is proposed and investigated. Simulation results shows that the breakdown voltage of JBS terminated with VLE-JTE can achieve 6500V, reaching up to more than 95% of parallel-plane junction bulk breakdown. Moreover, it implements a single mask with window areas varying laterally away from the main junction instead of extra ion implantation or etching steps to achieve multiple-zone JTE, making it easier to be implemented in applications.

Monte Carlo Simulation of Cluster Growth and Defect Annealing

1996 ◽  
Vol 439 ◽  
Author(s):  
A. V. Fedorov ◽  
A. Van Veen ◽  
J. Th De Hosson
Keyword(s):  
Ion Implantation ◽  
Cluster Growth ◽  
Cavity Formation ◽  
Defect Clusters ◽  
Gas Desorption ◽  
Defect Annealing ◽  
Helium Ion ◽  
Program Application ◽  
Simulation Results ◽  
Micro Cavity

AbstractA computer program MODEX has been developed to predict the evolution of the irradiation defects in materials during ion implantation and subsequent annealing. The evolution of the defect clusters is simulated through a number of trapping and dissociation events. Two examples of the program application are presented: (1) 1 keV helium ion implantation in molybdenum up to doses of 1013 cm-2 with the subsequent ramp annealing up to 1400 K; and (2) 2.5 keV helium ion implantation in silicon with 1016 cm-2 with ramp annealing up to 1600 K. The simulation results are compared to the experimental results obtained by gas desorption techniques. The threshold dose needed for micro-cavity formation in silicon is discussed.

scholarly journals Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

2020 ◽  
Vol 7 (2) ◽  
pp. 65-70
Author(s):  
Randall L. Holliday ◽  
Joshua M. Young ◽  
Satyabrata Singh ◽  
Floyd D. McDaniel ◽  
Bibhudutta Rout
Keyword(s):  
Ion Implantation ◽  
Molecular Beam ◽  
Laser Annealing ◽  
Chemical Vapor ◽  
Synthesis Process ◽  
Direct Bandgap ◽  
Photovoltaic Applications ◽  
Optimal Beam ◽  
Simulation Results ◽  
High Concentrations

By increasing the Sn concentration in Ge1-ySny and Ge1-x-ySixSny systems, these materials can be tuned from indirect to direct bandgap along with increasing electronic and photonic properties. Efforts have been made to synthesize Sn-Ge and Ge-Si-Sn structures and layers to produce lower energy direct bandgap materials. Due to low solid solubility of Sn in Ge and Si-Ge layers, high concentrations of Sn are not achieved by traditional synthesis processes such as chemical vapor deposition or molecular beam epitaxy. Implantation of Sn into Si-Ge systems, followed by rapid thermal annealing or pulse laser annealing, is shown to be an attractive technique for increasing Sn concentration, which can increase efficiencies in photovoltaic applications. In this paper, dynamic ion-solid simulation results are presented. Simulations were performed to determine optimal beam energy, implantation order, and fluence for a multi-step, ion-implantation based synthesis process.

Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

2011 ◽  
Vol 318 (1) ◽  
pp. 572-575
Author(s):  
Huiying Zhou ◽  
Shengchun Qu ◽  
Peng Jin ◽  
Bo Xu ◽  
Xiaoling Ye ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Indium Ion
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