High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

2014 ◽  
Vol 778-780 ◽  
pp. 808-811
Author(s):  
Xiao Chuan Deng ◽  
Cheng Yuan Rao ◽  
Jin Wei ◽  
Hua Ping Jiang ◽  
Miao Miao Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Parallel Plane ◽  
Simulation Results ◽  
Schottky Rectifier ◽  
Novel Variation

A novel variation of lateral etching junction termination extension (VLE-JTE) for Silicon carbide (SiC) power junction barrier Schottky rectifier (JBS) using a single mask is proposed and investigated. Simulation results shows that the breakdown voltage of JBS terminated with VLE-JTE can achieve 6500V, reaching up to more than 95% of parallel-plane junction bulk breakdown. Moreover, it implements a single mask with window areas varying laterally away from the main junction instead of extra ion implantation or etching steps to achieve multiple-zone JTE, making it easier to be implemented in applications.

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Investigation Of Microplasma Breakdown In 4H Silicon Carbide

1998 ◽  
Vol 512 ◽  
Author(s):  
Uwe Zimmermann ◽  
Anders Hallén ◽  
Andrey O. Konstantinov ◽  
Bo Breitholtz
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Measurement Techniques ◽  
Electrical Measurement ◽  
Parallel Plane ◽  
Turn On ◽  
Forward Current ◽  
Current Densities ◽  
Microplasma Breakdown

ABSTRACTReverse bias breakdown behaviour of high quality 4H silicon carbide p-n diodes was investigated, using optical and electrical measurement techniques. Most of the sample diodes suffered from early breakdown phenomena in the form of microplasmas at about 80% of the calculated parallel plane breakdown voltage for the diodes, as evident from measured I-V curves. A group of these microplasmas could be correlated to micropipes, identified by optical microscopy, while a large number of microplasmas were caused by other defects and inhomogenities in the space charge region under reverse bias. The same spots that revealed early breakdown phenomena under reverse bias also showed a different electroluminescence (EL) behaviour under low forward current densities compared to those areas with a homogeneous breakdown behaviour. However, even diodes containing one or more micropipes in the region of the junction showed good rectifying behaviour up to two third of the parallel plane breakdown voltage, where the turn-on of a microplasma was observed.

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS

2004 ◽  
Vol 14 (03) ◽  
pp. 865-871 ◽  
Author(s):  
Lin Zhu ◽  
Peter Losee ◽  
T. Paul Chow
Keyword(s):  
Optimal Design ◽  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Avalanche Breakdown ◽  
Schottky Rectifiers ◽  
Design Tradeoffs ◽  
Schottky Rectifier ◽  
Avalanche Breakdown Voltage

This paper presents a novel Schottky rectifier structure based on the superjunction approach, which is utilizes 2- and 3-D field shaping to increase the avalanche breakdown voltage. Device forward and blocking characteristics are analyzed with numerical simulations and compared with conventional 4 H - SiC Schottky rectifiers. Optimal design tradeoffs between breakdown voltage and specific on-resistance are obtained for high voltage 4 H - SiC superjunction Schottky rectifiers. The results show that the new structure can provide a 20 × lower R on,sp than conventional Schottky rectifier for 6kV device. In addition, device termination and possible fabrication steps for the superjunction devices are also presented.

Highly Heat-Dissipating and High-Voltage SOI-LDMOS Power Device

2012 ◽  
Vol 614-615 ◽  
pp. 1574-1577
Author(s):  
Xiao Ming Yang ◽  
Yu Cai ◽  
Tian Qian Li
Keyword(s):  
Surface Temperature ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Power Device ◽  
Drift Region ◽  
Type Layer ◽  
Simulation Results ◽  
Buried Layers ◽  
P Type ◽  
Maximum Surface Temperature

A highly heat-dissipating and high-voltage SOI-LDMOS power device is proposed. Its substrate was selectively etched, like the Camsemi SOI, so breakdown voltage was decided only by lateral breakdown voltage. A p-type layer and a Si3N4 buried layers were introduced into the new structure for lowering specific on-resistance and temperature. The simulation results show that breakdown voltage is 747 V at the 37 μm length of the drift region, and specific on-resistance and maximum surface temperature are reduced by 94.48% and 15.43% than those of Camsemi SOI, respectively.

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

2014 ◽  
Vol 778-780 ◽  
pp. 791-794 ◽  
Author(s):  
Kohei Ebihara ◽  
Yasuki Yamamoto ◽  
Yoshiyuki Nakaki ◽  
Sunao Aya ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Parallel Plane ◽  
Power Devices ◽  
Edge Termination ◽  
Varying Thickness ◽  
High Breakdown Voltage ◽  
Tcad Simulation

Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

Composition and Structure of SiCx:H Films Formed by Plasma Immersion ION Implantation From A Methane Plasma

2000 ◽  
Vol 609 ◽  
Author(s):  
K. Volz ◽  
Ch. Klatt ◽  
W. Ensinger
Keyword(s):  
Silicon Carbide ◽  
Ir Spectroscopy ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Voltage ◽  
Chemical Binding ◽  
Composition And Structure ◽  
Plasma Immersion Ion Implantation

ABSTRACTHydrocarbon ions are implanted into silicon by pulse biasing Si to a high voltage of -45 kV in a methane plasma. The resulting SiCx:H films are examined with respect to their composition and chemical binding by RBS, NRA and IR spectroscopy. The process may yield all C/Si ratios, up to pure C films. The H depth profile is shown to be strongly governed by the C depth profile. Silicon carbide bonding as well as C–H bonds can be proven in the implanted region.

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures

2013 ◽  
Vol 740-742 ◽  
pp. 809-812 ◽  
Author(s):  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Benedetto Buono ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Doping Concentration ◽  
Process Variation ◽  
Process Variations ◽  
Fabrication Process ◽  
Power Devices ◽  
Voltage Variation ◽  
Conventional Structure

Silicon carbide (SiC) is one of the most attractive semiconductors for high voltage applications. The breakdown voltage of SiC-based devices highly depends on the variation of the fabrication process including doping of the epilayers and the etching steps. In this paper, we show a way to diminish this variability by employing novel trench structures. The influence of the process variations in terms of doping concentration and etching has been studied and compared with conventional devices. The breakdown voltage variation (ΔVBR) of 450 V and 2100 V is obtained for the ±20% variation of doping concentration of the devices with and without the trench structures, respectively. For ±20% variation in etching steps, the maximum ΔVBR of 380 V is obtained for the device with trench structures in comparison to 1800 V for the conventional structure without trench structures. These results show that the breakdown voltage variation is significantly reduced by utilizing the proposed structure.

The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)

2014 ◽  
Vol 778-780 ◽  
pp. 812-815
Author(s):  
Hao Yuan ◽  
Xiao Yan Tang ◽  
Yi Men Zhang ◽  
Yu Ming Zhang ◽  
Hong Liang Lv ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Ion Implantation ◽  
Breakdown Voltage ◽  
Implantation Process ◽  
Simulation Results ◽  
Junction Structure

Based on the theoretical analysis and the simulation results of the ion implantation process and the floating Junction structure, a 4H-SiC SBD with floating junction (FJ_SBD) is fabricated. Compared with the on-resistance 5.13 mΩ·cm2 of conventional SBD fabricated at the same time, the on-resistance of FJ_SBD with 3μm P+ buried box is only 6.29 mΩ·cm2. The breakdown voltage of the FJ_SBD reaches 950V which is much higher than the 430V of conventional SBD. According to the presented results, The BFOM of the FJ_SBD is 3 times higher than the value of the conventional SBD. It is proved that FJ-SBD has greater prospects for development.

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 120-125
Author(s):  
Ling Sang ◽  
Li Xin Tian ◽  
Fei Yang ◽  
Jing Hua Xia ◽  
Rui Jin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Design Methodology ◽  
Electric Field Distribution ◽  
Multiplication Factor ◽  
Edge Termination ◽  
Region Division ◽  
Simulation Results ◽  
Uniform Ring ◽  
Linear Increment

Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.

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