Monte Carlo Simulation of Cluster Growth and Defect Annealing

1996 ◽  
Vol 439 ◽  
Author(s):  
A. V. Fedorov ◽  
A. Van Veen ◽  
J. Th De Hosson
Keyword(s):  
Ion Implantation ◽  
Cluster Growth ◽  
Cavity Formation ◽  
Defect Clusters ◽  
Gas Desorption ◽  
Defect Annealing ◽  
Helium Ion ◽  
Program Application ◽  
Simulation Results ◽  
Micro Cavity

AbstractA computer program MODEX has been developed to predict the evolution of the irradiation defects in materials during ion implantation and subsequent annealing. The evolution of the defect clusters is simulated through a number of trapping and dissociation events. Two examples of the program application are presented: (1) 1 keV helium ion implantation in molybdenum up to doses of 1013 cm-2 with the subsequent ramp annealing up to 1400 K; and (2) 2.5 keV helium ion implantation in silicon with 1016 cm-2 with ramp annealing up to 1600 K. The simulation results are compared to the experimental results obtained by gas desorption techniques. The threshold dose needed for micro-cavity formation in silicon is discussed.

Membrane folding by helium ion implantation for three-dimensional device fabrication

2007 ◽  
Vol 25 (6) ◽  
pp. 2184 ◽  
Author(s):  
William J. Arora ◽  
Sybren Sijbrandij ◽  
Lewis Stern ◽  
John Notte ◽  
Henry I. Smith ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Device Fabrication ◽  
Helium Ion

An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results

2004 ◽  
Vol 66 (2-3) ◽  
pp. 219-230 ◽  
Author(s):  
Clemens Heitzinger ◽  
Andreas Hössinger ◽  
Siegfried Selberherr
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Three Dimensional ◽  
Simulation Results

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

2019 ◽  
Vol 144 ◽  
pp. 164-171
Author(s):  
Ningbo Sun ◽  
Shaoting Lang ◽  
Yingchun Zhang
Keyword(s):  
Ion Implantation ◽  
Helium Ion

Simulation of the micro-injection moulding process: effect of the thermo-rheological status on the morphology

2011 ◽  
Vol 225 (4) ◽  
pp. 224-238 ◽  
Author(s):  
T Nguyen-Chung ◽  
C Löser ◽  
G Jüttner ◽  
T Pham ◽  
M Obadal ◽  
...  
Keyword(s):  
Injection Moulding ◽  
Process Conditions ◽  
Transfer Coefficients ◽  
Moulding Process ◽  
Micro Injection Moulding ◽  
Mould Filling ◽  
Injection Moulding Process ◽  
Moulding Machine ◽  
Simulation Results ◽  
Micro Cavity

The software package Moldflow Plastics Insights was used to simulate the filling of a micro-cavity by considering precise material data and accurate boundary conditions. Experiments were carried out on an accurately controlled micro-injection moulding machine (formicaPlast) for providing important parameters to verify the simulation results and improve the accuracy of the simulation. Based on the relationship between the cavity pressure and the mould-filling ratio, the heat transfer coefficients can be appropriately determined for different process conditions. Finally, the transient thermo-rheological results were analysed with regard to their influence on the morphology of semi-crystalline (PP) micro-injection moulded parts, which not only give rise to the mechanisms of the morphological formation but also verify the quality of the simulation results.

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

Irradiation hardening of pure vanadium and vanadium alloys due to helium ion implantation and displacement damage

2020 ◽  
Vol 540 ◽  
pp. 152381
Author(s):  
Yitao Yang ◽  
Tingxing Yan ◽  
Chonghong Zhang ◽  
Xin Fu ◽  
Tongda Ma ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Displacement Damage ◽  
Vanadium Alloys ◽  
Irradiation Hardening ◽  
Helium Ion
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