Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867056 ◽

2014 ◽

Author(s):

Akihiro Matsuda ◽

Akira Hiroki ◽

Yuta Goto ◽

Masaaki Nakamura ◽

JongChul Yoon

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Gate voltage dependence of channel length modulation for 14 nm FinFETs

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521673 ◽

2016 ◽

Author(s):

Yuki Nariai ◽

Akira Hiroki

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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An analytical MOSFET model including gate voltage dependence of channel length modulation parameter for 20nm CMOS

2008 International Conference on Electrical and Computer Engineering ◽

10.1109/icece.2008.4769188 ◽

2008 ◽

Author(s):

Akira Hiroki ◽

Akihiro Yamate ◽

Masayoshi Yamada

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Modulation Parameter ◽

Gate Voltage Dependence

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Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867054 ◽

2014 ◽

Author(s):

Yuta Goto ◽

Akira Hiroki ◽

Akihiro Matsuda ◽

Masaaki Nakamura ◽

JongChul Yoon

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.155872 ◽

1992 ◽

Vol 39 (9) ◽

pp. 2015-2020 ◽

Author(s):

L. Selmi ◽

R. Menozzi ◽

P. Gandolfi ◽

B. Ricco

Keyword(s):

Numerical Analysis ◽

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Effective Channel ◽

Gate Voltage Dependence

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Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2016.2524626 ◽

2016 ◽

Vol 16 (2) ◽

pp. 255-262

Author(s):

Ting Liu ◽

Levent E. Aygun ◽

Sigurd Wagner ◽

James C. Sturm

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Gate Voltage ◽

Thin Film Transistors ◽

Voltage Dependence ◽

Silicon Thin Film ◽

Field Stress ◽

Gate Voltage Dependence

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The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_37 ◽

1988 ◽

pp. 341-347

Author(s):

M. J. Kirton ◽

M. J. Uren ◽

S. Collins

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Interface States ◽

Gate Voltage Dependence

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Gate Voltage-Dependence of Junction Capacitance in MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3101999 ◽

2021 ◽

pp. 1-4

Author(s):

Jinwook Kuk ◽

Seonghearn Lee

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Junction Capacitance ◽

Gate Voltage Dependence

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Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

2015 International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2015.7288578 ◽

2015 ◽

Author(s):

Nikolaos Mavredakis ◽

Predrag Habas ◽

Alexandre Acovic ◽

Rene Meyer ◽

Matthias Bucher

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Gate Voltage Dependence

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ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of It2 between VDMOS and LDMOS transistors

IEEJ Transactions on Electrical and Electronic Engineering ◽

10.1002/tee.20669 ◽

2011 ◽

Vol 6 (4) ◽

pp. 361-366 ◽

Author(s):

Kenichi Hatasako ◽

Fumitoshi Yamamoto ◽

Akio Uenishi ◽

Takashi Kuroi ◽

Shigeto Maegawa ◽

...

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Gate Voltage Dependence

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Gate voltage dependence of 1/f noise in carbon nanotubes with the different metal contacts

2013 22nd International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2013.6578970 ◽

2013 ◽

Author(s):

Toshio Kawahara ◽

Satarou Yamaguchi ◽

Yasuhide Ohno ◽

Kenzo Maehashi ◽

Kazuhiko Matsumoto ◽

...

Keyword(s):

Carbon Nanotubes ◽

Gate Voltage ◽

Voltage Dependence ◽

Metal Contacts ◽

Gate Voltage Dependence

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