A 311.6 GHz Phase-locked Loop in 0.13 µm SiGe BiCMOS Process with −90 dBc/Hz in-band Phase Noise

Author(s):  
Yuan Liang ◽  
Chirn Chye Boon ◽  
Yangtao Dong ◽  
Qian Chen ◽  
Zhe Liu ◽  
...  
2007 ◽  
Vol 2007 ◽  
pp. 1-8 ◽  
Author(s):  
Klaus Schmalz ◽  
Eckard Grass ◽  
Frank Herzel ◽  
Maxim Piz

This paper presents a 5 GHz wideband I/Q modulator/demodulator for 650 MHz OFDM signal bandwidth, which is integrated with a 5 GHz phase locked loop for I/Q generation. The quadrature signals are derived from a 10 GHz CMOS VCO followed by a bipolar frequency divider. The phase noise at 1 MHz offset is −112 dBc/Hz for the modulator as well as for the demodulator. The chips were produced in a 0.25 μm SiGe BiCMOS technology. The signal-to-noise ratio (SNR) of transmitted/received OFDM signal and the corresponding I/Q mismatch versus baseband frequency are given. The modulator achieves an SNR of 22–23 dB, and the demodulator realizes an SNR up to 22 dB. The modulator reaches a data rate of 2.16 Gbit/s using 64 QAM OFDM, and the demodulator realizes 1.92 Gbits/s.


2009 ◽  
Vol 7 ◽  
pp. 243-247 ◽  
Author(s):  
K. Hu ◽  
F. Herzel ◽  
J. C. Scheytt

Abstract. In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.


2010 ◽  
Vol 20 (1) ◽  
pp. 37-39 ◽  
Author(s):  
Le Wang ◽  
P. Sun ◽  
Yu You ◽  
A. Mikul ◽  
R. Bonebright ◽  
...  

2021 ◽  
pp. 2140002
Author(s):  
Yanbo Chen ◽  
Shubin Zhang

Phase Locked Loop (PLL) circuit plays an important part in electronic communication system in providing high-frequency clock, recovering the clock from data signal and so on. The performance of PLL affects the whole system. As the frequency of PLL increases, designing a PLL circuit with lower jitter and phase noise becomes a big challenge. To suppress the phase noise, the optimization of Voltage Controlled Oscillator (VCO) is very important. As the power supply voltage degrades, the VCO becomes more sensitive to supply noise. In this work, a three-stage feedforward ring VCO (FRVCO) is designed and analyzed to increase the output frequency. A novel supply-noise sensing (SNS) circuit is proposed to suppress the supply noise’s influence on output frequency. Based on these, a 1.2 V 2 GHz PLL circuit is implemented in 110 nm CMOS process. The phase noise of this CMOS charge pump (CP) PLL is 117 dBc/Hz@1 MHz from test results which proves it works successfully in suppressing phase noise.


Sign in / Sign up

Export Citation Format

Share Document