First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

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Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

IEEE Electron Device Letters ◽

10.1109/led.2012.2206069 ◽

2012 ◽

Vol 33 (9) ◽

pp. 1264-1266 ◽

Cited By ~ 8

Author(s):

Li-Jung Liu ◽

Kuei-Shu Chang-Liao ◽

Yi-Chuen Jian ◽

Jen-Wei Cheng ◽

Tien-Ko Wang ◽

...

Keyword(s):

Flash Memory ◽

Charge Trapping ◽

Memory Device ◽

Buried Channel

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Study for aluminum metal patterning process with oxide hard mask in 90-nm s-flash memory device fabrication

10.1117/12.773241 ◽

2008 ◽

Author(s):

Sang Il Hwang ◽

Ki Jun Yun ◽

Sang Wook Ryu ◽

Kang Hyun Lee ◽

Jae Won Han

Keyword(s):

Flash Memory ◽

Memory Device ◽

Device Fabrication ◽

Hard Mask ◽

Aluminum Metal

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The dominant mechanisms of hot-hole injection induced SILC and their correlation with disturbs in N-flash memory cells

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) ◽

10.1109/vtsa.1999.786049 ◽

2003 ◽

Cited By ~ 1

Author(s):

S.S. Chung ◽

C.M. Yih ◽

Z.H. Ho ◽

C.J. Lin ◽

D.S. Kuo ◽

...

Keyword(s):

Flash Memory ◽

Hole Injection ◽

Memory Cells

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Triple high k stacks (AI/sub 2/O/sub 3//HfO/sub 2//AI/sub 2/O/sub 3/) with high pressure (10atm) H/sub 2/and D/sub 2/ annealing for SONOS type flash memory device applications

4th IEEE Conference on Nanotechnology, 2004. ◽

10.1109/nano.2004.1392247 ◽

2005 ◽

Cited By ~ 3

Author(s):

Sanghun Jeon ◽

Sangmoo Choi ◽

Hokyung Park ◽

Hyunsang Hwang ◽

Jung Hee Han ◽

...

Keyword(s):

High Pressure ◽

Flash Memory ◽

Memory Device ◽

High K ◽

Device Applications

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Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽

10.3390/nano8100799 ◽

2018 ◽

Vol 8 (10) ◽

pp. 799 ◽

Cited By ~ 1

Author(s):

Jer Wang ◽

Chyuan Kao ◽

Chien Wu ◽

Chun Lin ◽

Chih Lin

Keyword(s):

Flash Memory ◽

Charge Trapping ◽

Memory Device ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

Flat Band ◽

Hysteresis Curve ◽

Band Shift ◽

K Value ◽

High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

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