Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunneling

2010 ◽  
Author(s):  
Seung-Yong Cha ◽  
Hyo-June Kim ◽  
Doo-Jin Choi
Keyword(s):  
Multilayer Structures ◽  
Charge Trap ◽  
Lanthanum Aluminate ◽  
Memory Characteristics ◽  
Nordheim Tunneling

Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler–Nordheim Tunneling Program/Erase Operation

2009 ◽  
Vol 30 (2) ◽  
pp. 171-173 ◽  
Author(s):  
C. Sandhya ◽  
U. Ganguly ◽  
N. Chattar ◽  
C. Olsen ◽  
S.M. Seutter ◽  
...  
Keyword(s):  
Charge Trap ◽  
Nordheim Tunneling

TCAD simulation for capture / emission of carriers by traps in SiN: trap-assisted tunneling model extended for capture of carriers injected via Fowler-Nordheim tunneling

2021 ◽  
Author(s):  
Michiru Hogyoku ◽  
Yoshinori Yokota ◽  
Kazuhito Nishitani
Keyword(s):  
Computer Aided Design ◽  
Capture Efficiency ◽  
Oxide Semiconductor ◽  
Additional Time ◽  
Charge Trap ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tcad Simulation ◽  
Incremental Step ◽  
Nordheim Tunneling

Abstract We propose the novel trap-assisted tunneling (TAT) model that incorporates the ability to calculate dissipation of the kinetic energy of carriers propagating in the conduction or valence band. The proposed model allows us to evaluate capture efficiency (or the capture cross section) of carriers injected into the SiN charge trap layer via Fowler-Nordheim tunneling. By applying our TAT model to large planar Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) capacitors, experimental data showing that electron capture efficiency depends on the tunnel oxide thickness are physically interpreted. Furthermore, 3-dimensional technology computer-aided design (TCAD) simulation using SiN trap parameters roughly extracted from planar MONOS data shows that the calculated incremental step pulse programming characteristics of the charge trap memory (CTM) prototype device are comparable with measured data. We have found that additional time to calculate SiN trap charges is less than only 5 % of all remaining calculation time.

Dependence of memory characteristics on the (ZrO2)x(SiO2)1−xelemental composition for charge trap flash memory applications

2015 ◽  
Vol 30 (6) ◽  
pp. 065010 ◽  
Author(s):  
Zhenjie Tang ◽  
Xubing Lu ◽  
Yupeng Yang ◽  
Jing Zhang ◽  
Dongwei Ma ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trap ◽  
Memory Applications ◽  
Memory Characteristics

Effects of Gate/Blocking Oxide Energy Barrier on Memory Characteristics in Charge Trap Flash Memory Cells

2015 ◽  
Vol 7 (7) ◽  
pp. 594-598
Author(s):  
Dong Hua Li ◽  
Wandong Kim ◽  
Won Bo Shim ◽  
Se Hwan Park ◽  
Yoon Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Energy Barrier ◽  
Memory Cells ◽  
Charge Trap ◽  
Memory Characteristics
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