Temperature Dependent Electrical Characterization of Organic Semiconductor Diodes Deposited at 277g

2006 ◽  
Author(s):  
S.A. Moiz ◽  
M. M. Ahmed ◽  
Kh. S. Karimov ◽  
M. Mehmood
Keyword(s):  
Organic Semiconductor ◽  
Electrical Characterization ◽  
Temperature Dependent

Temperature dependent optical and electrical characterization of SnS/CdS solar cell.

2021 ◽  
pp. 139069
Author(s):  
Taavi Raadik ◽  
Nicolae Spalatu ◽  
Jüri Krustok ◽  
Raavo Josepson ◽  
Maarja Grossberg
Keyword(s):  
Solar Cell ◽  
Electrical Characterization ◽  
Temperature Dependent

Perylene diimide: Synthesis, fabrication and temperature dependent electrical characterization of heterojunction with p-silicon

2013 ◽  
Vol 426 ◽  
pp. 6-12 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Fakhra Aziz ◽  
Muhammad Shahid ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Perylene Diimide ◽  
Temperature Dependent

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (8) ◽  
pp. 3183-3188 ◽  
Author(s):  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Jun Young Choi ◽  
Sangmin Han ◽  
Yun Seop Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Zinc Oxide

Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction

Optik ◽  
2017 ◽  
Vol 142 ◽  
pp. 644-650 ◽  
Author(s):  
Yusuf Selim Ocak ◽  
Cihat Bozkaplan ◽  
Honar Salah Ahmed ◽  
Ahmet Tombak ◽  
Mustafa Fatih Genisel ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Temperature Dependent

Metal-Ferroelectric-Semiconductor Characteristics of BaMgF4 Films on p-Silicon

1991 ◽  
Vol 230 ◽  
Author(s):  
T. S. Kalkur ◽  
J. R. Kulkarni ◽  
R. Y. Kwor ◽  
L. Levinson ◽  
L. Kammerdiner
Keyword(s):  
Threshold Voltage ◽  
Zirconium Oxide ◽  
Ionic Conduction ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Capping Layer ◽  
Capacitance Voltage ◽  
Ferroelectric Memories ◽  
Non Destructive

AbstractCapacitance-voltage characterstics of BaMgF4 film deposited in an ion-assisted deposition system shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. Electrical characterization of the films shows that these films can be used to implement non-destructive read-out non-volatile ferroelectric memories. These films were found to dissolve in water and other aqueous solutions. In order to overcome this problem, a suitable capping layer like zirconium oxide and amorphous silicon was deposited on BMF films. The shift in threshold voltage did not change significantly due to the incorporation of the capping layer. The shift in threshold voltage was found to be temperature dependent and this might be due to ionic conduction in fluorides.

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1430-1433 ◽  
Author(s):  
Alexander Hofer ◽  
Roland Biberger ◽  
Günther Benstetter ◽  
Björn Wilke ◽  
Holger Göbel
Keyword(s):  
Organic Semiconductor ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Semiconductor Films ◽  
Probe Microscopy
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