Perylene diimide: Synthesis, fabrication and temperature dependent electrical characterization of heterojunction with p-silicon

2013 ◽  
Vol 426 ◽  
pp. 6-12 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Fakhra Aziz ◽  
Muhammad Shahid ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Perylene Diimide ◽  
Temperature Dependent

Temperature dependent optical and electrical characterization of SnS/CdS solar cell.

2021 ◽  
pp. 139069
Author(s):  
Taavi Raadik ◽  
Nicolae Spalatu ◽  
Jüri Krustok ◽  
Raavo Josepson ◽  
Maarja Grossberg
Keyword(s):  
Solar Cell ◽  
Electrical Characterization ◽  
Temperature Dependent

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (8) ◽  
pp. 3183-3188 ◽  
Author(s):  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Jun Young Choi ◽  
Sangmin Han ◽  
Yun Seop Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Zinc Oxide

Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction

Optik ◽  
2017 ◽  
Vol 142 ◽  
pp. 644-650 ◽  
Author(s):  
Yusuf Selim Ocak ◽  
Cihat Bozkaplan ◽  
Honar Salah Ahmed ◽  
Ahmet Tombak ◽  
Mustafa Fatih Genisel ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Temperature Dependent

Metal-Ferroelectric-Semiconductor Characteristics of BaMgF4 Films on p-Silicon

1991 ◽  
Vol 230 ◽  
Author(s):  
T. S. Kalkur ◽  
J. R. Kulkarni ◽  
R. Y. Kwor ◽  
L. Levinson ◽  
L. Kammerdiner
Keyword(s):  
Threshold Voltage ◽  
Zirconium Oxide ◽  
Ionic Conduction ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Capping Layer ◽  
Capacitance Voltage ◽  
Ferroelectric Memories ◽  
Non Destructive

AbstractCapacitance-voltage characterstics of BaMgF4 film deposited in an ion-assisted deposition system shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. Electrical characterization of the films shows that these films can be used to implement non-destructive read-out non-volatile ferroelectric memories. These films were found to dissolve in water and other aqueous solutions. In order to overcome this problem, a suitable capping layer like zirconium oxide and amorphous silicon was deposited on BMF films. The shift in threshold voltage did not change significantly due to the incorporation of the capping layer. The shift in threshold voltage was found to be temperature dependent and this might be due to ionic conduction in fluorides.

scholarly journals Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology

2018 ◽  
Vol 924 ◽  
pp. 958-961 ◽  
Author(s):  
Muhammad Shakir ◽  
Hossein Elahipanah ◽  
Raheleh Hedayati ◽  
Carl Mikael Zetterling
Keyword(s):  
Elevated Temperature ◽  
Transient Response ◽  
Electrical Characterization ◽  
Nand Gate ◽  
Dynamic Parameters ◽  
Temperature Dependent ◽  
Noise Margin ◽  
Wide Range ◽  
Output Noise

This work presents the design and electrical characterization of in-house-fabricated 2-input NAND gate. The monolithic bipolar 2-input NAND gate employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC and operates over a wide range of temperature and supply voltage.The fabricated circuit was characterized on the wafer by using a hot-chuck probe-station from 25 °C up to 500 °C. The circuit is also characterized over a wide range of voltage supply i.e. 11 to 20 V. The output-noise margin high (NMH) and output-noise margin low (NML) are also measured over a wide range of temperatures and supply voltages using voltage transfer characteristics (VTC). The transient response was measured by applying two square waves of, 5 kHz and 10 kHz. It is demonstrated that the dynamic parameters of the circuit are temperature dependent. The 2-input TTL NAND gate consumes 20 mW at 500 °C and 15 V.

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

2015 ◽  
Vol 111 ◽  
pp. 12-17 ◽  
Author(s):  
Andrzej Taube ◽  
Jakub Kaczmarski ◽  
Renata Kruszka ◽  
Jakub Grochowski ◽  
Kamil Kosiel ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Gan On Si

scholarly journals Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

2015 ◽  
Vol 3 (7) ◽  
pp. 1468-1472 ◽  
Author(s):  
Thomas Lenz ◽  
Moses Richter ◽  
Gebhard J. Matt ◽  
Norman A. Luechinger ◽  
Samuel C. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Transport ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.

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