The effect of annealing temperature on the structure and dielectric properties of (Ba/sub 0.6/Sr/sub 0.4/)TiO/sub 3/ thin films

2003 ◽  
Author(s):  
Wenbiao Wu ◽  
Dongwen Peng ◽  
Xiaofeng Liang ◽  
Zhongyan Meng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature

scholarly journals Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

RSC Advances ◽  
2020 ◽  
Vol 10 (16) ◽  
pp. 9549-9562 ◽  
Author(s):  
J. Koaib ◽  
N. Bouguila ◽  
H. Abassi ◽  
N. Moutia ◽  
M. Kraini ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Conduction Mechanism ◽  
Annealing Temperature ◽  
Electrical And Dielectric Properties

The annealing temperature (Ta) dependence of the structural, morphological, electrical and dielectric properties of ZnS thin films was investigated.

Effect of Annealing Temperature on The Refrective Index and Dielectric Properties of TiO2/MnO2 CORE/SHELL Thin Films

2014 ◽  
Vol 6 (3) ◽  
pp. 1227-1232
Author(s):  
Peter Ekuma Agbo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Xrd Analysis ◽  
Core Shell ◽  
Structural Nature ◽  
Deposited Film

Thin film of the form TiO2/MnO2 was deposited using the chemical bath method. The deposited thin films were annealed at temperatures of in order to investigate the effect of annealing temperature on the refractive index and dielectric property. To do this the films were characterized using UV-Spectrophotometer and XRD analysis was also carriedout to study the structural nature of the deposited film. Our results reaveled that annealing has profound effect on theindex of refraction and the dielectric properties.  

Dielectric properties of nanocrystalline Pb0.8Sr0.2TiO3 thin films at different annealing temperature

2009 ◽  
Vol 114 (2-3) ◽  
pp. 576-579 ◽  
Author(s):  
K.C. Verma ◽  
R.K. Kotnala ◽  
M.C. Mathpal ◽  
N. Thakur ◽  
Prikshit Gautam ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature

Structure and Characteristics of ZrO2 Dielectric Thin Films by Sol-Gel Technique

2014 ◽  
Vol 602-603 ◽  
pp. 767-770 ◽  
Author(s):  
Ching Fang Tseng ◽  
Chiu Yun Chen ◽  
Pei Wen Huang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Dielectric Thin Films ◽  
Dielectric Characteristics ◽  
Impedance Analyzer ◽  
Annealing Temperatures ◽  
Gel Technique

Dielectric properties and microstructures of ZrO2thin films prepared by the sol-gel method at different annealing temperatures have been investigated. All films exhibited ZrO2(111) highly orientation perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. Dielectric properties of the Ag/ZrO2/Ag/Si structure were measured by using HP 4192 Impedance Analyzer and Agilent 4155 Semiconductor Parameter Analyzer. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.

Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates

2016 ◽  
Vol 69 (10) ◽  
pp. 1571-1574 ◽  
Author(s):  
Chil-Hyoung Lee ◽  
Young-Jei Oh ◽  
Deuk Yong Lee ◽  
Doo-Jin Choi
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature

Microstructure and Dielectric Properties of LiTiNiO Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 2635-2638
Author(s):  
Yan Dong ◽  
Bo Ping Zhang ◽  
Ya Ru Zhang ◽  
Jing Feng Li
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Frequency Stability ◽  
Dielectric Constants ◽  
Sem Images ◽  
Dense Microstructure ◽  
Increasing Temperature

LiTiNiO thin films were deposited on Pt/Ti/SiO2/Si(100) substrates using a sol-gel spin-coat method. The effects of annealing temperature and annealing time on microstructures and dielectric properties of the thin films were investigated. SEM images showed the thin films had uniform and dense microstructure and the grain size increased with increasing temperature and time. The LiTiNiO thin films consisted of complex oxides which proportions were mainly dependent on the annealing condition. The LiTiNiO thin film annealed at 600°C for 1h showed the highest dielectric constant and frequency stability, while prolonging annealing time even at 600°C resulted in the decrease in the frequency stability of the dielectric constants.

Effects of annealing temperature on the microstructure, ferroelectric and dielectric properties of W-doped Na0.5Bi0.5TiO3 thin films

2016 ◽  
Vol 42 (10) ◽  
pp. 12210-12214 ◽  
Author(s):  
X.M. Jiang ◽  
C.H. Yang ◽  
P.P. Lv ◽  
S.J. Guo ◽  
C. Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature

Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates

2008 ◽  
Vol 569 ◽  
pp. 73-76
Author(s):  
Sung Pill Nam ◽  
Sung Gap Lee ◽  
Young Hie Lee
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Tungsten Oxide Thin Films

The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.

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