Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates

2008 ◽  
Vol 569 ◽  
pp. 73-76
Author(s):  
Sung Pill Nam ◽  
Sung Gap Lee ◽  
Young Hie Lee
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Tungsten Oxide Thin Films

The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Structural and electrical properties of Mg Silicide thin films deposited by RF sputtering

2020 ◽  
Vol 30 ◽  
pp. 6-10
Author(s):  
Suniksha Gupta ◽  
Smita Howlader ◽  
Atul Sharma ◽  
M.K. Banerjee ◽  
K. Asokan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Rf Sputtering ◽  
Structural And Electrical Properties

scholarly journals Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

RSC Advances ◽  
2020 ◽  
Vol 10 (16) ◽  
pp. 9549-9562 ◽  
Author(s):  
J. Koaib ◽  
N. Bouguila ◽  
H. Abassi ◽  
N. Moutia ◽  
M. Kraini ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Conduction Mechanism ◽  
Annealing Temperature ◽  
Electrical And Dielectric Properties

The annealing temperature (Ta) dependence of the structural, morphological, electrical and dielectric properties of ZnS thin films was investigated.

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

2012 ◽  
Vol 252 ◽  
pp. 211-215
Author(s):  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Zhi Meng Luo ◽  
Cai Hua Huang ◽  
Zong Zhi Hu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Tunable Properties

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

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