Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

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Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.774-776.954 ◽

2013 ◽

Vol 774-776 ◽

pp. 954-959

Author(s):

Xiao Jing Wang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Carrier Concentration ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Hexagonal Structure ◽

Buffer Layers ◽

Zno Thin Films ◽

Average Transmittance ◽

Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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Microstructure and electrical properties of chemical solution deposition (Pb,La)(Zr,Ti)O3 thin films on Pt electrodes

Journal of Materials Research ◽

10.1557/jmr.1999.0591 ◽

1999 ◽

Vol 14 (11) ◽

pp. 4366-4371 ◽

Cited By ~ 21

Author(s):

Jeffrey S. Cross ◽

Mitsushi Fujiki ◽

Mineharu Tsukada ◽

Yasutoshi Kotaka ◽

Yasuyuki Goto

Keyword(s):

Electrical Properties ◽

Chemical Solution Deposition ◽

Secondary Phase ◽

Chemical Solution ◽

Solution Deposition ◽

Chemical Solution Deposition Method ◽

Atomic Force ◽

Pt Electrodes ◽

Boundary Triple ◽

Triple Points

(Pb,La)(Zr,Ti)O3 (PLZT) films with thicknesses of 150 and 225 nm were prepared by the chemical solution deposition method on sputtered Pt/IrO2 coated on SiO2/Si wafers. The annealed films revealed two different microstructures: fined-grained and large-grained. The thinner film had the largest grain size and highest leakage current, whereas the thicker film had small grains and lower leakage. Atomic force microscope images showed that the thinner film had half-domed-shaped grains, which were about one-third thinner at the grain boundary triple points. These triple points also contained a nanocrystalline nonstoichiometric secondary phase, which contributed to high leakage. A model was developed showing differences in crystallization on the basis of grain growth and number of nuclei on the Pt surface. These results indicate the importance of controlling the film microstructure and its relationship to the film electrical properties.

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