Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.774-776.954 ◽

2013 ◽

Vol 774-776 ◽

pp. 954-959

Author(s):

Xiao Jing Wang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Carrier Concentration ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Hexagonal Structure ◽

Buffer Layers ◽

Zno Thin Films ◽

Average Transmittance ◽

Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

10.21203/rs.3.rs-185059/v1 ◽

2021 ◽

Author(s):

Chunhu Zhao ◽

Junfeng Liu ◽

Yixin Guo ◽

Yanlin Pan ◽

Xiaobo Hu ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Carrier Concentration ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Band Model ◽

Deposition Condition ◽

Optical And Electrical Properties ◽

Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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Effects of Al2O3 Buffer Layer on the Properties of ZnO: Al Thin Films Deposited on Glass by Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.848.301 ◽

2016 ◽

Vol 848 ◽

pp. 301-304

Author(s):

Xiao Jing Wang

Keyword(s):

Thin Films ◽

Grain Size ◽

Optical Property ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Hexagonal Structure ◽

Buffer Layers ◽

Glass Substrates ◽

Average Transmittance ◽

Conductive Property

The ZnO:Al (AZO) films were deposited on glass substrates with Al2O3 buffer layers by RF magnetron sputtering. The obtained films had the hexagonal structure and preferred orientation of (002). Compared with AZO film without buffer layer, the grain size of the film with buffer layer was increased and the conductive property was increased greatly. the grain size of AZO films reached 27.9nm for those with buffer layers. The optical property of AZO films was decreased by the buffer layers. The resistivity of AZO films with Al2O3 buffer layer was about 6.6×10-3 Ω·cm and the average transmittance was over 80% in the range of 450~900nm.

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.989-994.65 ◽

2014 ◽

Vol 989-994 ◽

pp. 65-68

Author(s):

Xiao Jing Wang

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Buffer Layer ◽

Compressive Stress ◽

Lattice Constant ◽

Rf Magnetron Sputtering ◽

Hexagonal Structure ◽

Preferred Orientation ◽

Flexible Substrates ◽

Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

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