A single-ended to differential capacitive sensor interface circuit designed in CMOS technology

Author(s):  
T. Singh ◽  
T. Ytterdal
2014 ◽  
Vol 556-562 ◽  
pp. 1847-1851
Author(s):  
Xiang Wu ◽  
Fang Ming Deng

This paper presents a capacitive humidity sensor in CMOS technology. The humidity sensor element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication cost. The sensor interface employs a fully-digital architecture based on phase locked loop, which results in low pow dissipation. The proposed humidity sensor is fabricated in TSMC 0.18μm CMOS process and the chip occupies an area of 0.05mm2. The measurement result shows that the sensor value exhibits good linearity within the range of 10-90%RH and the interface circuit consumes only 1.05μW at 0.5V supply voltage.


Author(s):  
J. Nurmi ◽  
M. Williams ◽  
P. Jarvilehto ◽  
K.-P. Estola ◽  
A. Ruha ◽  
...  

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.


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