A Bootstrapped Switch with Accelerated Rising Speed and Reduced On-Resistance

2021 ◽  
Author(s):  
Haoyu Zhuang ◽  
Qifu Cao ◽  
Xizhu Peng ◽  
He Tang
Keyword(s):  
Bootstrapped Switch

A High Linear CMOS Body Effect Compensation Bootstrapped Switch

2015 ◽  
Vol 24 (03) ◽  
pp. 1550032 ◽  
Author(s):  
Siwan Dong ◽  
Minjie Liu ◽  
Zhangming Zhu ◽  
Yintang Yang
Keyword(s):  
High Speed ◽  
Dynamic Range ◽  
Harmonic Distortion ◽  
Cmos Process ◽  
Body Effect ◽  
Spurious Free Dynamic Range ◽  
Source Voltage ◽  
Bootstrapped Switch ◽  
Free Dynamic ◽  
Better Than

This paper presents a new bootstrapped switch with high speed and low nonlinear distortion. Instead of fixed voltage, the gate-to-source voltage of switch varies with input to implement first-order body effect compensation. Post-layout simulations have been done in standard 0.18-μm CMOS process at 1.8 V, and results indicate that at 200 MHz sample rate, a peak signal-to-noise-and-distortion ratio (SNDR) of 98.4 dB, spurious-free dynamic range (SFDR) of 105.7 dB and total harmonic distortion (THD) of -104.9 dB can be acquired. For input frequency up to the 60 MHz frequency, proposed structure maintains |THD| over 85 dB, SFDR better than 86 dB, respectively.

Bootstrapped switch without bulk effect in standard CMOS technology

2002 ◽  
Vol 38 (12) ◽  
pp. 555 ◽  
Author(s):  
M. Waltari ◽  
K. Halonen
Keyword(s):  
Cmos Technology ◽  
Bootstrapped Switch ◽  
Bulk Effect

A bootstrapped switch employing a new clock feed-through compensation technique

2009 ◽  
Vol 30 (12) ◽  
pp. 125007 ◽  
Author(s):  
Wu Xiaofeng ◽  
Liu Hongxia ◽  
Su Li ◽  
Hao Yue ◽  
Li Di ◽  
...  
Keyword(s):  
Compensation Technique ◽  
Bootstrapped Switch
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