A High Linear CMOS Body Effect Compensation Bootstrapped Switch
2015 ◽
Vol 24
(03)
◽
pp. 1550032
◽
Keyword(s):
This paper presents a new bootstrapped switch with high speed and low nonlinear distortion. Instead of fixed voltage, the gate-to-source voltage of switch varies with input to implement first-order body effect compensation. Post-layout simulations have been done in standard 0.18-μm CMOS process at 1.8 V, and results indicate that at 200 MHz sample rate, a peak signal-to-noise-and-distortion ratio (SNDR) of 98.4 dB, spurious-free dynamic range (SFDR) of 105.7 dB and total harmonic distortion (THD) of -104.9 dB can be acquired. For input frequency up to the 60 MHz frequency, proposed structure maintains |THD| over 85 dB, SFDR better than 86 dB, respectively.
2013 ◽
Vol 473
◽
pp. 50-53
Keyword(s):
2004 ◽
Vol 13
(06)
◽
pp. 1183-1201
2014 ◽
Vol 03
(01)
◽
pp. 1450001
◽
Keyword(s):