Method for vacuum state evaluation based on analysis of dynamics changes of electron field emission current and X-radiation in time

2003 ◽  
Author(s):  
K. Walczak
Keyword(s):  
Field Emission ◽  
Vacuum State ◽  
Emission Current ◽  
Electron Field Emission ◽  
State Evaluation ◽  
Field Emission Current ◽  
Electron Field ◽  
Analysis Of Dynamics

Electron Field Emission from Nano-Diamond Films

2001 ◽  
Vol 704 ◽  
Author(s):  
S.G. Wang ◽  
Q. Zhang ◽  
S.F. Yoon ◽  
J. Ahn ◽  
Q. Wang ◽  
...  
Keyword(s):  
Grain Size ◽  
Electric Field ◽  
Field Emission ◽  
Current Density ◽  
Diamond Films ◽  
Emission Current Density ◽  
Hydrogen Gas ◽  
Emission Current ◽  
Electron Field Emission ◽  
Electron Field

AbstractIn this paper, the field emission properties of nano-diamond films were investigated by measuring the curves of emission current density (J) versus applied electric field (E). The nano-diamond films were prepared on n-type (100) silicon substrate by microwave plasma enhanced chemical vapor deposition (MPECVD) technique using a gas mixture of nitrogen-methane-hydrogen. Field emission results show that, with increasing hydrogen gas flow ratio of [H2]/[N2+CH4+H2] from 0 to 10 %, diamond grain size increases from 5 to 60 nm, threshold electric field for electron field emission increases from 1.2 to 5.75 V/μm, and emission current density decreases from 820 to 560 μA/cm2, demonstrating that small grain size nano-diamond films are promising as a cathode material for low-field electron emitters.

Large and Stable Field-Emission Current from Heavily Si-Doped AlN Grown by MOVPE

2000 ◽  
Vol 621 ◽  
Author(s):  
Makoto Kasu ◽  
Naoki Kobayashi
Keyword(s):  
Electric Field ◽  
Field Emission ◽  
Light Emission ◽  
Electron Field Emission ◽  
Maximum Current Density ◽  
Field Emission Current ◽  
Maximum Current ◽  
Electron Field ◽  
Si Doped ◽  
Stable Field

ABSTRACTWe investigated electron field emission (FE) from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. We found that, as the Si-dopant density increases, the threshold electric field decreases, which indicates that electrons are supplied to the surface effectively as a result of Si doping. We show that heavily Si-doped AlN has a maximum FE current of 347 μA (the maximum current density of 11 mA/cm2), stable FE current (fluctuation: 3%), and a threshold electric field of 34 V/μm. We observed visible light emission (luminance: about 1200 cd/m2) from phosphors excited by the field-emitted electrons.

Electron Field Emission Characteristics of Silicon Nanodots Formed by the LPCVD Technique

2011 ◽  
Vol 49 (4) ◽  
pp. 342-347
Author(s):  
Kyoungwan Park ◽  
Seungman An ◽  
Taekyung Yim ◽  
Kyungsu Lee ◽  
Jeongho Kim ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Characteristics ◽  
Electron Field Emission ◽  
Electron Field

Electron field emission from intentionally introduced particles on extended niobium surfaces

1986 ◽  
Vol 59 (11) ◽  
pp. 3851-3860 ◽  
Author(s):  
R. J. Noer ◽  
Ph. Niedermann ◽  
N. Sankarraman ◽  
O/. Fischer
Keyword(s):  
Field Emission ◽  
Electron Field Emission ◽  
Electron Field
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